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Depth-Dependent Character of Extended Defects in Ion-Implanted and RTA'd Si

Published online by Cambridge University Press:  26 February 2011

Rodney A. Herring
Rodney A. Herring*
Affiliation:
Martin Marietta Laboratories, 1450 South Rolling Road, Baltimore, MD 21227-3839.
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Abstract

The character of extended defects formed in high-energy S-ion implanted and rapid thermal annealed (RTA'd) Si has been found by transmission electron microscopy (TEM) to be dependent on the depth at which the defects have formed in the ion-implanted regions. Si implanted with 6 MeV S-ions and RTA'd at 1000°C for 10 s showed a buried layer of extended defects with unfaulted loops towards the top and faulted loops towards the bottom. At higher S fluences, all the loops were unfaulted, some loops coalesced to form a dislocation network, and SiS precipitates were formed. At higher RTA temperatures, all the loops were unfaulted. A few possibilities that could explain the difference in defect character will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 129
Copyright
Copyright © Materials Research Society 1988

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References

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