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Depth Dependence of Residual Strains in Textured Mo Thin Films Using High-Resolution X-Ray Diffraction

Published online by Cambridge University Press:  15 February 2011

S. G. Malhotra ,
Z. U. Rek ,
S. M. Yalisove  and
J. C. Bilello
S. G. Malhotra
Affiliation:
Univ. of Michigan Dept. of Materials Science and Engineering, Ann Arbor, MI 48109
Z. U. Rek
Affiliation:
Univ. of Michigan Dept. of Materials Science and Engineering, Ann Arbor, MI 48109 SSRL, Stanford, CA 94395
S. M. Yalisove
Affiliation:
Univ. of Michigan Dept. of Materials Science and Engineering, Ann Arbor, MI 48109
J. C. Bilello
Affiliation:
Univ. of Michigan Dept. of Materials Science and Engineering, Ann Arbor, MI 48109
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Abstract

The magnitude of the average stress in a thin film can be obtained by measuring the curvature of the film-substrate couple. However, the details of the strain distribution, as a function of depth through the thickness of the film, can have important consequences in governing film quality and ultimate morphology. A high-resolution x-ray diffraction method was used to determine the depth dependence of strain in a textured Mo film, with a nominal thickness of 260 nm, which was deposited by planar magnetron sputtering onto Si (100) substrates. The principal strains, resolved onto a laboratory reference frame, displayed a negligible gradient in the azimuthal directions (x and y), but displayed a large gradient in the direction normal to the film (z). A similar trend was previously observed for a 100 nm polycrystalline film, but the magnitude of the normal strain very near the free surface was about a factor of 2 less. The increase in the normal strain may be due to the development of a preferred growth direction and grain facetting. A linear elastic model was also used to determine the strains in successive slabs of the film, where strain variations between slabs were indicated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 127
Copyright
Copyright © Materials Research Society 1996

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