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Deposition of Zinc Oxide Thin Films Using a Surface Reaction on Platinum Nanoparticles

Published online by Cambridge University Press:  05 April 2011

Kanji Yasui
Affiliation:
Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
Hitoshi Miura
Affiliation:
Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
Hiroshi Nishiyama
Affiliation:
Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
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Abstract

A new chemical vapor deposition method for the growth of ZnO films using the reaction between dimethylzinc (DMZn) and thermally excited H2O produced by a Pt-catalyzed H2–O2 reaction was investigated. The thermally excited H2O molecules formed by the exothermic reaction of H2 and O2 on the catalyst were ejected from a fine nozzle into the reaction zone and allowed to collide with DMZn ejected from another fine nozzle. The ZnO films were grown directly on a-plane (11-20) sapphire substrates at substrate temperatures of 773-873 K with no buffer layer. X-ray diffraction patterns exhibited intense (0002) and (0004) peaks from the ZnO(0001) index plane. The smallest full width at half maximum (FWHM) value of the ω- rocking curve of ZnO(0002) was less than 0.1º. The largest Hall mobility and the smallest residual carrier concentration of the ZnO films were 169 cm2V−1s−1 and 1.7×1017 cm−3, respectively. Photoluminescence (PL) spectra at room temperature exhibited a band edge emission at 3.29 eV, with a FWHM of 104 meV. Green luminescence from deeper levels was generally about 1.5% of the band edge emission intensity. PL spectra at 5 K showed a strong emission peak at 3.3603 eV, attributed to the neutral donor-bound exciton Dºx. The FWHM was as low as 1.0 meV. Free exciton emissions also appeared at 3.3757 eV (FXA, n=1) and 3.4221 eV (FXA, n=2).

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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