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Deposition of Tungsten Silicide Barrier Layers and Tungsten in Rectangular Vias

Published online by Cambridge University Press:  25 February 2011

Timothy S. Cale ,
Gregory B. Raupp  and
Manoj K. Jain
Timothy S. Cale
Affiliation:
Department of Chemical, Bio & Materials Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-6006
Gregory B. Raupp
Affiliation:
Department of Chemical, Bio & Materials Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-6006
Manoj K. Jain
Affiliation:
Department of Chemical, Bio & Materials Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-6006
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Abstract

Diffusion-reaction analysis of a two step process in which a tungsten silicide barrier layer is deposited in a rectangular trench by low pressure dichlorosilane reduction of tungsten hexafluoride followed by a complete tungsten fill by low pressure hydrogen reduction of tungsten hexafluoride reveals that high step coverage and high deposition rate can be readily achieved with logical selection of process parameters. This fact, coupled with the potential for accomplishing these deposition steps in the same single wafer reactor, suggests that this two step process may offer a high throughput alternative to blanket tungsten deposition by silane reduction.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 517
Copyright
Copyright © Materials Research Society 1990

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References

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