Hostname: page-component-cd9895bd7-jkksz Total loading time: 0 Render date: 2024-12-27T02:05:49.397Z Has data issue: false hasContentIssue false

Deposition of Thick Silicon Layers on Glass Substrate for Photovoltaic Application

Published online by Cambridge University Press:  10 February 2011

M. Sarret
Affiliation:
GMV Université Rennes I, Campus de Beaulieu, 35042 Rennes Cedex, France
T. Mohammed-Brahim
Affiliation:
GMV Université Rennes I, Campus de Beaulieu, 35042 Rennes Cedex, France
G. Baudry
Affiliation:
GMV Université Rennes I, Campus de Beaulieu, 35042 Rennes Cedex, France
D. Briand
Affiliation:
GMV Université Rennes I, Campus de Beaulieu, 35042 Rennes Cedex, France
O. Bonnaud
Affiliation:
GMV Université Rennes I, Campus de Beaulieu, 35042 Rennes Cedex, France
Get access

Abstract

A new silicon deposition reactor fabricated in our laboratory is presented in this paper. It works at Sub-Atmospherical total pressure, so it is a SAPCVD reactor. The deposition rates and electronic transport properties are compared with a conventional LPCVD reactor.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Briand, D thesis Rennes University 1541 (1995)Google Scholar
2. Loüer, D. and Langford, J.I.., J. Appl. Crystallogr. 21 (1987), 430.Google Scholar
3. Williamson, J.K., Hall, W.K., Acta Metall. 1 (1953), 22 Google Scholar
4. Kleider, J.P., and Longeaud, C., Solid State Phenomena, Scitec Publications Ltd., 44–46 (1995), 597646.Google Scholar
5. Bihan, F. Le, Fortin, B, Cauneau, S, Briand, D., Bonnaud, O..Thin Solid Films 301 (1997), 230235 Google Scholar
6. Azzaro, C. thesis ENSIG Toulouse 1991 Google Scholar
7. Kamins, T. M.R.S. (1997)Google Scholar