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Deposition of Si Thin Films by Reactive CVD

Published online by Cambridge University Press:  15 February 2011

Jun-Ichi Hanna
Jun-Ichi Hanna*
Affiliation:
Tokyo Institute of Technology, Imaging Science & Engineering Lab. Nagatsuta, Midori-ku, Yokohama 226, Japan
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Abstract

A new concept of Reactive CVD is proposed for the low-temperature growth of thin films by CVD and discussed in terms of general features of such film growth. One demonstrated example of the reactive CVD, called Spontaneous Chemical Deposition, features gas phase reactions of silane with fluorine is outlined in terms of the general characteristics of the film growth and properties.

In addition, a second example of reactive CVD, called Reactive Thermal CVD and involving thermal CVD of poly-SiGe from germanium fluoride and disilane, is discussed and low-temperature growth using this method is reviewed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 105
Copyright
Copyright © Materials Research Society 1995

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References

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