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Deposition of Ru Thin Films by MOCVD Using Direct Liquid Injection System

Published online by Cambridge University Press:  21 March 2011

Sang Y. Kang ,
Cheol S. Hwang  and
Hyeong J. Kim
Sang Y. Kang
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Cheol S. Hwang
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Hyeong J. Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
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Abstract

Ru thin films were deposited on SiO2/Si and (Ba,Sr)TiO3 [BST]/Pt/TiO2/SiO2/Si substrates using Ru(C2H5C5H4)2 [Ru(EtCp)2] by metal-organic chemical vapor deposition (MOCVD). To determine the effects of the solvent, C4H8O [tetrahydrofuran: THF], it was injected into the reaction chamber by the Direct Liquid Injection (DLI) system while Ru(EtCp)2 was input through the bubbler system. Also, Ru thin films were deposited using a liquid source, Ru(EtCp)2 dissolved in THF, delivered by the DLI system. The surface of the Ru thin films deposited on the BST substrate using only Ru(EtCp)2 through the bubbler system was very rough and milky, but the addition of THF made the surface of the films smooth and clean. In addition, Ru films deposited at 325°C using Ru(EtCp)2 dissolved in THF through the DLI system have a dense and smooth microstructure with resistivity as low as 15µωcm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 672: Symposium O – Mechanisms of Surface and Microstructure Evolution in Deposited Films and Film Structures , 2001 , O38.1
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Kawahara, T., Yamamuka, M., Yuuki, A. and Ono, K., Jpn. J. Appl. Phys. 35, 4880 (1996)Google Scholar
2. Lin, J., Masaaki, N., Tsukune, A., and Yamada, M., Appl. Phys. Lett. 74, 2370 (1999)Google Scholar
3. Ono, K., Horikawa, T., Shibano, T., Mikami, N., Kuroiwa, T., Kawahara, T., Matsuno, S., Uchikawa, F., Satoh, S. and Abe, H., Proc. Int. Electron Devices Meet. (IEEE, New York, 1998), p. 803.Google Scholar
4. Kang, S. Y., Choi, K. H., Lee, S. K., Hwang, C. S. and Kim, H. J., J. Electrochem. Soc. 147(3), 1161 (2000)Google Scholar
5. Nabatame, T., Hiratani, M., Kadoshima, M., Shimamoto, Y., Matsui, Y., Ohji, Y., Asano, I., Fujiwara, T., and Suzuki, T., Jpn. J. Appl. Phys. 39, L1188 (2000)Google Scholar
6. Kang, S. Y., Choi, K. H., Lee, S. K., Hwang, C. S. and Kim, H. J., J. Kor. Phys. Soc. 37(6), 1040 (2000)Google Scholar