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Deposition of GaN by Remote Plasma-Enhanced Chemical-Vapor Deposition (Remote PECVD)

Published online by Cambridge University Press:  25 February 2011

S.W. Choi ,
K.J. Bachmann  and
G. Lucovsky
S.W. Choi
Affiliation:
Departments of Materials Science and Engineering, andPhysics North Carolina State University, Raleigh, NC 27695
K.J. Bachmann
Affiliation:
Departments of Materials Science and Engineering, andPhysics North Carolina State University, Raleigh, NC 27695
G. Lucovsky
Affiliation:
Departments of Materials Science and Engineering, andPhysics North Carolina State University, Raleigh, NC 27695
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Abstract

Films of GaN have been grown on silicon by remote plasma-enhanced chemical-vapor deposition using trimethyl gallium and ammonia. The ammonia is rf plasma excited along with He, and the trimethyl gallium is introduced downstream from the plasma generation zone. The activation energy for the growth of GaN is 0.95±0.05 eV. This is tentatively assigned to the activation of NH groups, extracted from the plasma as primary precursors for the surface reaction with trimethyl gallium (TMG), or adsorbed fragments of this molecule. At high He flow rates, an abrupt increase in the growth rate is observed corresponding to a change in the reaction mechanism which is attributed to the formation of atomic nitrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 195
Copyright
Copyright © Materials Research Society 1991

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References

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