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Deposition of Epitaxial Carbide Films and Superlattices by Co-Evaporation of C60 and Transition Metals

Published online by Cambridge University Press:  10 February 2011

H. Högberg
Affiliation:
Uppsala University, Dept. of Inorganic Chemistry, The Angstr6m Laboratory, Uppsala, SWEDEN.
L. Norin
Affiliation:
Uppsala University, Dept. of Inorganic Chemistry, The Angstr6m Laboratory, Uppsala, SWEDEN.
J Lu
Affiliation:
Uppsala University, Dept. of Inorganic Chemistry, The Angstr6m Laboratory, Uppsala, SWEDEN.
J. O. Malm
Affiliation:
Lund University, National Center of HREM, Dept. of Inorganic Chemistry 2, Lund, SWEDEN.
U Jansson
Affiliation:
Uppsala University, Dept. of Inorganic Chemistry, The Angstr6m Laboratory, Uppsala, SWEDEN.
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Abstract

Thin films of TiC, VC and NbC have been deposited on MgO(001) by co-evaporation of C 60 and the metal. The metal induced a decomposition of the C60 cage and a subsequent carbide formation at 100 °C. Epitaxial TiC films were easily obtained at 250 °C, while higher deposition temperatures were required for epitaxial growth of VC(400 °C) and NbC(500 °C). The films grew with the relation MeC(001)//MgO(00 1) and MeC[ 100]//MgO[ 100]. It was also possible to deposit TiC/NbC/MgO polycrystalline multilayers and TiC/VC/MgO superlattices structures by a sequential evaporation of the metals.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

1. Pierson, H. O., Handbook of Refractory Carbides and Nitrides: Properties, Characteristics, Processing and Applications, Noyes, Westwood, (1996).Google Scholar
2. Zetterling, C.-M., Östling, M., Norin, L. and Jansson, U., In Wide- bandgap Semiconductors for High Power, High Frequency and High Temperature, edited by S. Denbaars, M. S. Shur, J. Palmour and M. Spencer, (Mater. Res. Soc. Proc. 512, Pittsburgh, PA, 1998).Google Scholar
3. Barnett, S. and Madan, A., Physics World, 11 (1) 45 (1998).Google Scholar
4. Norin, L., McGinnis, S., Jansson, U. and Carlsson, J.O., Vac, J.. Sci. Technol. A 15, 3082 (1997).Google Scholar
5. Norin, L., Acta. Univ. Ups. 370, 32 (1998), Thesis, Uppsala University.Google Scholar
6. Norin, L., Jansson, U., Dyer, C., Jacobsson, P. and McGinnis, S., Chem. Mater., 10, 1184 (1998).Google Scholar