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Deposition of Dielectric Thin Films by Irradiation of Condensed Reactant Mixtures
Published online by Cambridge University Press: 15 February 2011
Abstract
Results of ongoing investigations of a new method for processing molecular solids to form refractory thin films are presented. We have extended past work on boron nitride and alumina growth from molecular solids induced by synchrotron radiation (SR), to silica growth from tetramethylsilane and water at 80 K. Also reported are experiments where alumina is formed using 4.64 eV laser irradiation. The majority of the results suggest that with SR, the film growth is induced by secondary electrons from the substrate, whereas laser light excites the film growth by direct photolysis. Implications of this will be discussed.
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