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Deposition of Dielectric Films by Remote Plasma Enhanced CVD

Published online by Cambridge University Press:  28 February 2011

G. Lucovsky ,
D. V. Tsu  and
R. J. Markunas
G. Lucovsky
Affiliation:
Department of Physics, N.C.State University, Raleigh N.C.27965–8202
D. V. Tsu
Affiliation:
Department of Physics, N.C.State University, Raleigh N.C.27965–8202
R. J. Markunas
Affiliation:
Research Triangle Institute, Research Triangle Park N.C.27709
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Abstract

We describe a plasma enhanced chemical vapor deposition process (PECVD) developed for the low temperature deposition of thin films of silicon oxides, nitrides and oxynitrides.The process, designated as remote PECVD (RPECVD), differs from conventional PECVD in two ways; (a) not all of the process gases are subjected to plasma excitation; and (b) the deposition is done outside of the plasma region.We include an empirical model of the deposition process chemistry and discuss the use of infrared spectroscopy (IR) and Auger electron spectroscopy (AES) to characterize the local atomic structure of the deposited films.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 68: Symposium C – Plasma Processing , 1986 , 323
Copyright
Copyright © Materials Research Society 1986

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