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Deposition of Cubic-SiC Thin Films on Si (111) using the Molecular Ion Beam Technique

Published online by Cambridge University Press:  10 February 2011

T. Matsumoto ,
K. Mimoto ,
M. Kiuchi ,
S. Sugimoto  and
S. Goto
T. Matsumoto
Affiliation:
Plasma Physics Laboratory, Graduate School of Engineering, Osaka University, Yamada-oka 2-1, Suita, Osaka 565–0871, Japan
K. Mimoto
Affiliation:
Plasma Physics Laboratory, Graduate School of Engineering, Osaka University, Yamada-oka 2-1, Suita, Osaka 565–0871, Japan
M. Kiuchi
Affiliation:
Osaka National Research Institute, Midorigaoka 1–8–31, Ikeda, Osaka 563–8577, Japan
S. Sugimoto
Affiliation:
Plasma Physics Laboratory, Graduate School of Engineering, Osaka University, Yamada-oka 2-1, Suita, Osaka 565–0871, Japan
S. Goto
Affiliation:
Plasma Physics Laboratory, Graduate School of Engineering, Osaka University, Yamada-oka 2-1, Suita, Osaka 565–0871, Japan
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Abstract

SiC thin films were formed on Si (111) at growth temperatures of 750–1000 °C using the molecular ion beam technique, with a precursor of methylsilicenium ions (SiCH3+). The chemical bindings and surface structures of SiC thin films were analyzed by Raman spectroscopy and reflection high-energy electron diffraction. As a result, 3C-SiC (111) was grown on Si (111) substrates without carbonized treatments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 585: Symposium L – Fundamental Mechanisms of Low-Energy-Beam Modified Surface , 1999 , 165
Copyright
Copyright © Materials Research Society 2000

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