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Deposition of Amorphous Hydrogenated Silicon Films by VUV Laser CVD: Influence of Substrate Temperature

Published online by Cambridge University Press:  15 February 2011

H. Karstens  and
P. Hess
H. Karstens
Affiliation:
Institute of Physical Chemistry, University of Heidelberg, Im Neuenheimer Feld 253, D-69120 Heidelberg, Germany
P. Hess
Affiliation:
Institute of Physical Chemistry, University of Heidelberg, Im Neuenheimer Feld 253, D-69120 Heidelberg, Germany
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Abstract

Amorphous hydrogenated silicon (a-Si:H) films were deposited from disilane at substrate temperatures between 180 and 390 °C using a F2-laser (157 nm) in a parallel configuration. Material properties such as hydrogen content, SiH and SiH2 group concentration, photo-and dark conductivity, band-gap energy and the Urbach parameter were determined as a function of the deposition temperature. The material with the best optical and electronical properties was found for a substrate temperature of 260 °C. Using argon as the buffer gas instead of helium results in films of poor quality.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 93
Copyright
Copyright © Materials Research Society 1995

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References

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