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Dependence of Thermally Induced Metastability on Hydrogen Content in Amorphous Silicon

Published online by Cambridge University Press:  01 January 1993

Stanislaw M. Pietruszko
Stanislaw M. Pietruszko*
Affiliation:
Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, IMiO PW, Koszykowa 75, 00-662 Warsaw, Poland.
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Abstract

The thermally induced metastability was observed in unhydrogenated doped amorphous silicon prepred by Low Pressure Chemical Vapour Deposition (LPCVD). The equilibration temperature (T*) was found to be 380°± 20°C. The preliminary study of the influence of hydrogen content on thermally induced metastability in amorphous silicon is reported. In the hydrogenated doped films the equilibration temperature changes from 380° ± 20°C to 170° ± 10°C, as H content increases to 12 at.%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 255
Copyright
Copyright © Materials Research Society 1993

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References

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