Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-29T07:38:42.486Z Has data issue: false hasContentIssue false
  • English
  • Français

Dependence of Hydrogen Incorporation in Undoped a-Si:H and µc-Si:H on Hydrogen Dilution During Pecvd

Published online by Cambridge University Press:  26 February 2011

N. M. Johnson ,
S. H. Wolff ,
C. D. Doland  and
J. Walker
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
S. H. Wolff
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
C. D. Doland
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
J. Walker
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
Get access

Abstract

New results are reported on the effect of hydrogen dilution on the incorporation of hydrogen in undoped, unalloyed silicon films that were deposited by plasma-enhanced chemical vapor deposition in an rf-glow discharge system. A crystalline phase was detected for dilution ratios (H2: SiH 4) of 20:1 and greater. This phase change was accompanied by the appearance of higher-order silicon-hydride complexes. It was further observed that the H concentration in the films increased with dilution for ratios of 10:1 and greater. These results are compared with other recent studies of hydrogen dilution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 85
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Present address: Princeton University, Princeton, NJ.Google Scholar
1. Shibata, N., Fukuda, K., Ohtoshi, H., Hanna, J., Oda, S., and Shimizu, I., Mat. Res. Soc. Symp. Proc. 95, 225 (1987).Google Scholar
2. Tsai, C. C., Doliad, C., Wacker, B., Ponce, F. A., Anderson, G. B., and Street, R. A., this proceedings.Google Scholar
3. Matsuda, A., Koyama, M., Ikuchi, N., Imanishi, Y., and Tanaka, K., Jpn. J. Appl. Phys. 25, L54 (1986).Google Scholar
4. Matsuda, A., Yamaoka, T., Wolff, S., Koyama, M., Imanishi, Y., Kataoka, H., Matsuura, H., and Tanaka, K., J. Appl. Phys. 60, 4027 (1986).Google Scholar
5. Mishima, Y., Hamasaki, T., Kurata, H., Hirose, M., and Osaka, Y., Jpn. J. Appl. Phys. 20, L121 (1981).Google Scholar
6. IqbaT, Z. and Veprek, S., J. Phys. C: Solid State Phys. 15, 377 (1982).Google Scholar
7. Benninghoven, A., Rudenauer, F. G., and Werner, A. H., Secondary Ion Mass Spectrometry(Wiley, New York, 1987).Google Scholar
8. Lucovsky, G., Nemanich, R. J., and Knights, J. C., Phys. Rev. B 19, 2064 (1979).Google Scholar
9. Moustakas, T. D., Weitz, D. A., Prestridge, E. B., and Friedman, R., Mat. Res. Soc. Symp. Proc. 38, 405 (1985).Google Scholar
10. Schaefer, J. A., Stucki, F., Anderson, J. A., Lapeyre, G. J., and Gopel, S., Surface Sci. 140 207 (1984).Google Scholar
11. Ross, R. C., Tsong, I. S. P., Messier, R., Lanford, W. A., and Burman, C., J. Vac. Sci. Technol. 20,406 (1982).CrossRefGoogle Scholar
12. Ready, S. E., Boyce, J. B., and Tsai, C. C., this proceedings.Google Scholar