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Dependence of H Diffusion in Hydrogenated Silicon on Doping and the Fermi Level
Published online by Cambridge University Press: 17 March 2011
Abstract
For three types of hydrogenated silicon films, amorphous, microcrystalline and crystalline hydrogenated silicon, hydrogen diffusion was studied as a function of doping level employing depth profiling by secondary ion mass spectrometry. Hydrogen implantation was used to control the hydrogen concentration. All three materials show a similar doping dependence of H diffusion, namely a strong increase upon boron (p-type) doping and a much lesser increase for n- type (P, As) doping. In a band model of H diffusion, the effect is related to a decrease in energy of the hydrogen diffusion path. Possible explanations are a different charge state of diffusing hydrogen or an effect of the Fermi energy on the release energy of neutral hydrogen.
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- Copyright © Materials Research Society 1999
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