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Dependence of Field-Effect Mobility on Deposition Conditions in a-Si:H TFT

Published online by Cambridge University Press:  16 February 2011

Y. Chida ,
M. Kondo ,
G. Ganguly  and
A. Matsuda
Y. Chida
Affiliation:
Electrotechnical Laboratory, Umezono, Tsukuba-shi, Ibaraki 305, Japan
M. Kondo
Affiliation:
Electrotechnical Laboratory, Umezono, Tsukuba-shi, Ibaraki 305, Japan
G. Ganguly
Affiliation:
Electrotechnical Laboratory, Umezono, Tsukuba-shi, Ibaraki 305, Japan
A. Matsuda
Affiliation:
Electrotechnical Laboratory, Umezono, Tsukuba-shi, Ibaraki 305, Japan
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Abstract

High electron Mobility (over 3 cm2/Vs) thin film transistors (TFTs) have been fabricated using a-Si:H on thermally oxidized crystalline Si substrate. The procedures for fabricating the high performance TFTs are presented and the possible reasons for the high mobility are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 817
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

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