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Dependence of Composition and Microstructure of RuOx Films on Target Status and Substrate Temperature in Reactive Sputtering Deposition

Published online by Cambridge University Press:  10 February 2011

Q. Wang ,
K.-A. Yang ,
A. Franciosi ,
D. F. Evans  and
W. L. Gladfelter
Q. Wang
Affiliation:
Departments of Chemistry and Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455.
K.-A. Yang
Affiliation:
Departments of Chemistry and Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455.
A. Franciosi
Affiliation:
Departments of Chemistry and Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455.
D. F. Evans
Affiliation:
Departments of Chemistry and Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455.
W. L. Gladfelter
Affiliation:
Departments of Chemistry and Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455.
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Abstract

Ruthenium oxide films were deposited on Al2O3 (0001) and (1102) substrates using reactive sputtering under two different target surface conditions. Films grown when the surface of the target was metallic ruthenium (metallic-target) showed a Ru: O ratio of 1: 2.0±0.05 as determined by Rutherford backscattering spectrometry. At elevated deposition temperatures, these films aligned with the substrates as RuO2 (100) ║ A12O3 (0001) and RuO2 (101) ║ Al2O3(1102). Films deposited when the target surface was fully oxidized (oxidized-target) exhibited a Ru: O ratio of 1: 2.5±0.05 and displayed an oriented crystalline structure even at room temperature. The resistivity of the RuO2.5 films was 75 μΩ-cm and was independent of temperature between 5 and 300 K. Possible causes of this behavior are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 151
Copyright
Copyright © Materials Research Society 1996

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References

1. Yoo, I.K. and Desu, S.B. In Proceedings of the International Symposium on Application Ferroeletrics (ISAF-92); (IEEE, New York, 1992) pp 225.Google Scholar
2. Takemura, K., Sakuma, T. and Miyasaka, Y., Appl. Phys. Lett. 64, 2967 (1994).Google Scholar
3. Al-Shareef, H.N., Bellur, K.R., Kingon, A.I. and Auciello, O., Appl. Phys. Lett 66, 239 (1995).Google Scholar
4. Bernstein, S.D., Wong, T.Y., Kisler, Y. and Tustison, R.W., J. Mater. Res. 8, 12 (1992).Google Scholar
5. Chung, I., Lee, J.K., Lee, W.I., Chung, C.W. and Desu, S.B., Mat. Res. Soc. Symp Proc. 361, 249 (1995).Google Scholar
6. Kwok, C.K. and Desu, S.B., J. Mater. Res. 8, 339 (1993).Google Scholar
7. Eom, C.B., Dover, R.B.V., Philips, J.M., Werder, D.J., Marshall, J.H., Chen, C.H., Cava, R.J. and Fleming, R.M., Appl. Phys. Lett. 63, 2570 (1993).Google Scholar
8. Jia, Q.X., Chang, L.H. and Anderson, W.A., J. Mater. Res. 9, 2561–2565 (1994).Google Scholar
9. Wang, Q., Gladfelter, W.L., Evans, D.F., Fan, Y. and Franciosi, A., J. Vac.Sci. Technol. A 14, In press (1996).Google Scholar
10. Wang, Q., Zhang, X.F., Gilmer, D., Fan, Y., Fransiosi, A., Evans, D.F. and Gladfelter, W.L., J. Mater. Res. To be Submitted.Google Scholar
11. Westwood, W.D., Physics of Thin Films 14, 1 (1989).Google Scholar