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Dependence of Aging on Inhomogeneities in InGaN/AlGaN/GaN Light-Emitting Diodes

Published online by Cambridge University Press:  03 September 2012

V.E. Kudryashov ,
S.S. Mamakin ,
A.N. Turkin ,
A.E. Yunovich ,
A.N. Kovalev  and
F.I. Manyakhin
V.E. Kudryashov
Affiliation:
M.V.Lomonosov Moscow State University, Department of Physics, 119899 Moscow, Russia E-mail: [email protected].
S.S. Mamakin
Affiliation:
M.V.Lomonosov Moscow State University, Department of Physics, 119899 Moscow, Russia E-mail: [email protected].
A.N. Turkin
Affiliation:
M.V.Lomonosov Moscow State University, Department of Physics, 119899 Moscow, Russia E-mail: [email protected].
A.E. Yunovich
Affiliation:
M.V.Lomonosov Moscow State University, Department of Physics, 119899 Moscow, Russia E-mail: [email protected].
A.N. Kovalev
Affiliation:
Moscow Institute of Steel and Alloys, Leninski Prospect 4, Moscow 117235, Russia
F.I. Manyakhin
Affiliation:
Moscow Institute of Steel and Alloys, Leninski Prospect 4, Moscow 117235, Russia
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Abstract

Changes of properties of green LEDs based on InxGa1-xN/AlyGa1-y/GaN heterostructures were studied during 150÷200 hours at currents J = 30÷80 mA. The radiation intensity at low currents (0.1÷1 mA) is quite sensitive to such an aging, it falls down 10÷100 times. Quantum efficiency and spectral parameters at normal currents (J ≈ 10 mA) change non-monotonically during aging, some degradation is observed after 168 hours. The degradation is observed also after a short (< 1 min) period of reverse current. These phenomena are discussed in terms of under threshold defect's formation and their migration in the space charge region of p-n-heterojunction. Potential fluctuations in the space charge region are quite sensitive to this process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.25
Copyright
Copyright © Materials Research Society 1999

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