Hostname: page-component-745bb68f8f-hvd4g Total loading time: 0 Render date: 2025-02-10T07:52:11.896Z Has data issue: false hasContentIssue false
  • English
  • Français

Delta-phase manganese gallium on gallium nitride: a magnetically tunable spintronic system

Published online by Cambridge University Press:  15 March 2011

Kangkang Wang ,
Abhijit Chinchore ,
Wenzhi Lin ,
Arthur Smith  and
Kai Sun
Kangkang Wang
Affiliation:
Department of Physics and Astronomy, Ohio University, Athens, OH 45701, U.S.A.
Abhijit Chinchore
Affiliation:
Department of Physics and Astronomy, Ohio University, Athens, OH 45701, U.S.A.
Wenzhi Lin
Affiliation:
Department of Physics and Astronomy, Ohio University, Athens, OH 45701, U.S.A.
Arthur Smith
Affiliation:
Department of Physics and Astronomy, Ohio University, Athens, OH 45701, U.S.A.
Kai Sun
Affiliation:
Department of Materials Sciences and Engineering, University of Michigan, Ann Arbor, MI 48109, U.S.A.
Get access

Abstract

Ferromagnetic delta-phase manganese gallium with Mn:Ga ratio between 1:1 to 1.5:1 is grown on wurtzite gallium nitride and scandium nitride substrates, using molecular beam epitaxy. The dependencies of growth properties, e.g. interface formation, surface reconstruction and crystalline quality, on substrate crystallographic structure and polarity are investigated. Results suggest that for growth on wurtzite GaN, Ga-polar surface promotes quicker interface formation, and also results in better crystalline quality of the MnGa film, as compared to N-polar. The crystal orientation and magnetic anisotropy are found to be different than those grown on cubic scandium nitride substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1118: Symposium K – Magnetic Nanostructures by Design , 2008 , 1118-K06-06
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wolf, S.A., Awschalom, D.D., Buhrman, R.A., Daughton, J.M., Molnar, S. von, Roukes, M.L., Chtchelkanova, A.Y., and Treger, D.M., Science 294, 1488 (2001).Google Scholar
2. Sakuma, A., J. Magnetism and Magnetic Materials 187, 105 (1998).Google Scholar
3. Tanaka, M., Harbison, J.P., DeBoeck, J., Sands, T., Philips, B., Cheeks, T.L. and Keramidas, V.G., Appl.Phys.Lett. 62, 1565 (1993).Google Scholar
4. Roy, W. Van, Akinaga, H., Miyanishi, S., Tanaka, K. and Kuo, L.H., Appl.Phys.Lett. 69, 711 (1996).Google Scholar
5. Lu, E.D., Ingram, D.C., Smith, A.R., Knepper, J.W. and Yang, F.Y., Phys.Rev.Lett. 97, 146101 (2001).Google Scholar
6. Smith, A.R., Feenstra, R.M., Greve, D.W., Shin, M.S., Skowronski, M., Neugebauer, J., Northrup, J.E., Surf.Sci. 423, 70 (1999)Google Scholar
7. Smith, A.R., Al-Brithen, H.A., Ingram, D.C. and Gall, D., J.Appl.Phys. 90, 1809 (2001).Google Scholar
8. Smith, A.R., Feenstra, R.M., Greve, D.W., Shin, M.S., Skowronski, M., Neugebauer, J., Northrup, J.E., J.Vac.Sci.Tech.B. 16, 2242 (1998)Google Scholar