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Delta Doping for Deep Level Analysis in Semiconductors

Published online by Cambridge University Press:  25 February 2011

J. Piprek ,
P. Krispin ,
H. Kostial  and
K. W. BÖer
J. Piprek
Affiliation:
Humboldt Universität, Fachbereich Physik, Invalidenstr. 110, 0–1040 Berlin, Germany
P. Krispin
Affiliation:
Paul-Drude-Institut, Hausvogteiplatz 5–7, 0–1086 Berlin, Germany
H. Kostial
Affiliation:
Paul-Drude-Institut, Hausvogteiplatz 5–7, 0–1086 Berlin, Germany
K. W. BÖer
Affiliation:
University of Delaware, Material Science Program, Newark, DE 19716
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Abstract

The occupation of deep-level defects in semiconductors is investigated by delta-doping such impurities at a specified distance from the metallurgical boundary within Schottky diodes. Capacitance-voltage characteristics are analyzed using ID device simulation software. These characteristics change significantly depending on the deep-level energy and the sheet position. This new approach to deep-level analysis is applied to Schottky diodes on MBE-grown n-GaAs with a planar titanium doped sheet. At moderate Ti concentrations the well-known Ti acceptor level near Ec-0.2 eV governs the electrical properties. In addition, two other types of Ti defects are found.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 25
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1] Piprek, J., Krispin, P., Kostial, H., Lange, C. H. and Böer, K. W., phys. stat. sol. (b) 173, 661 (1992).Google Scholar
[2] Sze, S.M., Physics of Semiconductor Devices, (John Wiley & Sons, New York, 1982), Ch. 5.2.Google Scholar
[3] Basore, P. A., IEEE Trans. El. Dev. 37, 337 (1990).Google Scholar
[4] Shockley, W. and Read, W. T., Jr., Phys. Rev. 87, 835 (1952) andGoogle Scholar
Hall, R. N., Phys. Rev. 87, 387 (1952).Google Scholar
[5] Ullrich, H., Knecht, A., Bimberg, D., Kräutle, H., and Schlaak, W., to be published in J. Appl. Phys. (1992).Google Scholar
[6] Scheffler, H., Korb, W., Bimberg, D. and Ulrici, W., Appl. Phys. Lett. 57, 1318 (1990).Google Scholar
[7] Brandt, C. D., Hennel, A. M., Bryskiewicz, T., Ko, K. Y., Pawlosicz, L. M., and Gatos, H. C., J. Appl. Phys. 65, 3459 (1989).Google Scholar
[8] Fronius, H., Fischer, A., and Ploog, K., J. Crystal Growth 81, 169 (1987).Google Scholar
[9] Däweritz, L. and Hey, R., Surf. Sci. 236, 15 (1990).Google Scholar
[10] Kim, K. B., Kniffin, M., Sinclair, R., and Helms, C. R., J. Vac. Sci. Technol. A, 6, 1473 (1988).Google Scholar