Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-29T07:27:59.848Z Has data issue: false hasContentIssue false
  • English
  • Français

Degradation Phenomenon in Semiconductive Nanoamorphous Structures from Molybdenum Oxide

Published online by Cambridge University Press:  26 February 2011

A. Markosyan ,
Sergo Kamanchadgyan  and
Razmik Malkhasyan
A. Markosyan
Affiliation:
[email protected], Scientific Production Enterprise “ATOM”, Tevosyan st. 3/1 Yerevan 375076, Quantum electronics, Armenia, email: [email protected]
Sergo Kamanchadgyan
Affiliation:
[email protected], Scientific Production Enterprise “ATOM”, Tevosyan st. 3/1 Yerevan 375076, Armenia
Razmik Malkhasyan
Affiliation:
[email protected], Scientific Production Enterprise “ATOM”, Tevosyan st. 3/1 Yerevan 375076, Armenia
Get access

Abstract

The condition of degradation of electrical properties of samples prepared from powder of nanoamorphous semiconductive oxide in the course of time is discovered and studied when investigating electro-physical properties of the given materials for the first time synthesized at Scientific Production Enterprise “ATOM”. It has been shown that degradation phenomenon is also present in amorphous materials, which relies on the configuration of the pores of the sample.

The resistance of sample in the open air changes over a period of several months. However, it decreases and is comparatively fast stabilized when placed in vacuum. The absorption and de-absorption of different gases have diffusion nature and highly depend on environment temperature. Water steam in atmosphere has been determined to be the main cause of degradation.

Keywords

amorphousnanostructureMo
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 887: Symposium Q – Degradation Processes in Nanostructured Materials , 2005 , 0887-Q06-08
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Materials, Nanophase, Sinthesis – Propeties – Applications. Edited by Hajipanjis, K. and Siegel, R. Kluwer Acad. Publ. p. 808, 1994.Google Scholar
2. Malkhasyan, P.T. et al. , Patent of the USSR N 2041959, 11.11.1990. “Method of direct reconstruction of oxides and making of amorphous materials”.Google Scholar
3. Markosyan, A., Grigorya, S. and Krmoyan, R., “Semiconductor Micro- and Nanoelectronics”, proceedings of the fifth international conference, p. 94–97, Agveran, 2005.Google Scholar
4. Ha, S. and Bergman, J. P. MRS Bulletinr, v. 30, 305–307, 2005.Google Scholar
5. Shimizu, Y. and Egashira, M. MRS Bulletin, v. 24, 18–24, 1999.Google Scholar