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Degradation Mechanism of GaN-based LEDs With Different Growth Parameters
Published online by Cambridge University Press: 31 January 2011
Abstract
We investigated the degradation mechanism of GaN LEDs due to the application of a high d.c. stressing current. To identify the underlying process for device failure we examined the effects of the InGaN quantum well growth parameters on the hot-electron hardness of the devices. Systematic characterizations on the degradations in the microstructural, thermoreflectance, and low frequency noise properties of the devices were performed.
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- Copyright © Materials Research Society 2010