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Degradation Behavior of Optoelectronic Devices

Published online by Cambridge University Press:  15 February 2011

Junji Matsui
Junji Matsui*
Affiliation:
Fundamental Research Laboratories, Nippon Electric Co., Ltd., Miyazaki Yonchome, Miyamae-Ku, Kawasaki, 213, Japan
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Abstract

Various degradation modes and features of crystalline defects associated with the degradation observed both in GaA1As/GaAs and InGaAsP/InP double heterostructure light emitting sources (LED's and Lasers) are reviewed, noticing similarities and differencies between those two material systems. Non-existence of rapid degradation in the quaternary caused by DLD formation (dislocation motion) will be discussed in terms of atomic rearrangements arouna the dislocation core.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 477
Copyright
Copyright © Materials Research Society 1982

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References

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