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Deformation-Induced Dislocations in 4H-SiC and GaN

Published online by Cambridge University Press:  10 February 2011

M. H. Hong ,
A. V. Samant ,
V. Orlov ,
B. Farber ,
C. Kisielowski  and
P. Pirouz
M. H. Hong
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH, 44106–7204.
A. V. Samant
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH, 44106–7204.
V. Orlov
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH, 44106–7204.
B. Farber
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH, 44106–7204.
C. Kisielowski
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA.
P. Pirouz
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH, 44106–7204.
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Abstract

Bulk single crystals of 4H-SiC have been deformed in compression in the temperature range 550–1300°C, whereas a GaN thin film grown on a (0001) sapphire substrate was deformed by Vickers indentation in the temperature range 25–800°C. The TEM observations of the deformed crystals indicate that deformation-induced dislocations in 4H-SiC all lie on the (0001) basal plane but depending on the deformation temperature, are one of two types. The dislocations induced by deformation at temperatures above ∼1 100°C are complete, with a Burgers vector, b, of but are all dissociated into two partials bounding a ribbon of stacking fault. On the other 3 hand, the dislocations induced by deformation in the temperature range 550<T<∼ 1100°C were predominantly single leading partials each dragging a stacking fault behind them. From the width of dissociated dislocations in the high-temperature deformed crystals, the stacking fault energy of 4H-SiC has been estimated to be 14.7±2.5 mJ/m2. Vickers indentations of the [0001]-oriented GaN film produced a dense array of dislocations along the three 〈1120〉 directions at all temperatures. The dislocations were slightly curved with their curvature increasing as the deformation temperature increased. Most of these dislocations were found to have a screw nature with their b parallel to 〈1120〉. Also, within the resolution of the weak-beam method, they were not found to be dissociated. Tilting experiment show that these dislocations lie on the {1100} prism plane rather than the easier (0001) glide plane.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 369
Copyright
Copyright © Materials Research Society 1999

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References

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