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Defects in CZ—Silicon Investigated by the Positron Annihilation Techniques

Published online by Cambridge University Press:  28 February 2011

S. Dannefaer  and
D. Kerr
S. Dannefaer
Affiliation:
Department of Physics, University of Winnipeg Winnipeg, Manitoba, Canada
D. Kerr
Affiliation:
Department of Physics, University of Winnipeg Winnipeg, Manitoba, Canada
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Abstract

Positron measurements on boron doped CZ—silicon show that clusters of oxygen interstitials trap positrons. Depending on whether a vacancy is associated to this cluster or not, the positron lifetimes exhibit changes from 240 to 100 ps. The positron data indicate the nature of the initial —or precursor — stages for thermal donor formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 477
Copyright
Copyright © Materials Research Society 1985

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References

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