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Defect Structures in Heteroepitaxial InAs/GaAs and GaAs/InAs Grown by Atomic Layer Molecular Beam Epitaxy

Published online by Cambridge University Press:  03 September 2012

S. I. Molina ,
G. Aragon  and
R. Garcia
S. I. Molina
Affiliation:
Departamento de Química Inorgánica, Universidad de Cádiz, Apdo. 40 11510 Puerto Real (Cádiz)., Spain.
G. Aragon
Affiliation:
Departamento de Química Inorgánica, Universidad de Cádiz, Apdo. 40 11510 Puerto Real (Cádiz)., Spain.
R. Garcia
Affiliation:
Departamento de Química Inorgánica, Universidad de Cádiz, Apdo. 40 11510 Puerto Real (Cádiz)., Spain.
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Abstract

A Transmission Electron Microscopy (TEM) study on ALMBE grown InAs/GaAs (001) is presented. The density and the types of defects contained in InAs and GaAs layers are clearly different. A relation between the planar defects in these layers and the compressive and extensive nature of the growth for each layer is found. Atomic Layer Molecular Beam Epitaxy (ALMBE) grown InAs layers possess a better quality of defects than other InAs layers grown on GaAs (001) by conventional MBE. Several ways of nucleation are presented as possible for explaining the existence of the different defects found in the studied heterostructure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 163
Copyright
Copyright © Materials Research Society 1992

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References

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