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Defect Structures in GaP/Si

Published online by Cambridge University Press:  21 February 2011

Srikanth B. Samavedam ,
Eric P. Kvam ,
Greg Ford ,
Bruce W. Wessels ,
T. P. Chin  and
Jerry M. Woodall
Srikanth B. Samavedam
Affiliation:
School of Materials Engineering,
Eric P. Kvam
Affiliation:
School of Materials Engineering,
Greg Ford
Affiliation:
Department of Materials Science and Engineering, Northwestern University.
Bruce W. Wessels
Affiliation:
Department of Materials Science and Engineering, Northwestern University.
T. P. Chin
Affiliation:
School of Electrical Engineering, Purdue University.
Jerry M. Woodall
Affiliation:
School of Electrical Engineering, Purdue University.
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Abstract

The heteroepitaxial growth of gallium phosphide on silicon (GaP/Si) is a useful step towards integration of III-V based devices onto silicon. GaP layers grown on silicon substrates of different orientations using metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were characterized using transmission electron microscopy (TEM) with an attempt to understand the epilayer growth characteristics. Despite the fact that the GaP/Si system has a low misfit (≈0.4 %), a high density of crystal stacking defects was commonly observed. Inversion domain boundaries (IDBs) were another common defect observed in regions where the fault density was reduced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 431
Copyright
Copyright © Materials Research Society 1996

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References

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