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Defect Structure and Dynamics in Silicon
Published online by Cambridge University Press: 25 February 2011
Abstract
This paper gives a brief account of recent calculations of equilibrium configurations, formation energies, and migration energies of intrinsic lattice defects (vacancies, self-interstitials) and complexes of dopant impurities (phosphorus, aluminum) with these defects. The results have been used to provide a comprehensive interpretation of low- and high-temperature diffusion data.
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- Copyright © Materials Research Society 1986
References
REFERENCES
[1]
Hamann, D. R., Schluter, M. and Chiang, C., Phys. Rev. Lett.
43, 1494 (1979).CrossRefGoogle Scholar
[2]
Hohenberg, P. and Kohn, W., Phys. Rev.
136, B864 (1964); L. Sham and W. Kohn, Phys. Rev. 140, A1133 (1965); for recent reviews, see The Inhomogeneous Electron Gas, edited by N. H. March and S. Lundqvist (Plenum, New York, 1984).CrossRefGoogle Scholar
[5]
Louie, S. G., Schluter, M., Chelikowsky, J. R., and Cohen, M. L., Phys. Rev. B
13, 1654 (1976).CrossRefGoogle Scholar
[7]
Bernholc, J., Lipari, N. O., and Pantelides, S. T., Phys. Rev. Lett.
41, 895 (1978); G. A. Baraff anf M. Schluter, Phys. Rev. Lett. 41, 892 (1978).CrossRefGoogle Scholar
[8]
Car, R., Kelly, P. J., Oshiyama, A., and Pantelides, S. T., Phys. Rev. Lett.
52, 1814 (1984); R. Car, P. J. Kelly, A. Oshiyama, and S. T. Pantelides, Phys. Rev. Lett. 54, 360 (1985).CrossRefGoogle Scholar
[11]
Watkins, G. D., in Radiation Damage in Semiconductors, (Dunod, Paris, 1964), p. 67; see also G. D. Watkins, in Lattice Defects in Semiconductors - 1974, edited by F. A. Huntley, Institute of Physics Conference Series No. 23, 1975, p. 1.Google Scholar
[12] For a recent review of early theories, experimental data, and on-going debates see Frank, W., Goesele, U., Mehrer, H., and Seeger, A., in Diffusion in Solids II, edited by Nowick, A. S. and Murch, G., (Academic, New York, 1984), p. 64. See also the review article by S. M. Hu, in Atomic Diffusion in Semiconductors, edited by D. Shaw, (Plenum, New York, 1973), p. 217.Google Scholar
[13]
Baraff, G. A., Kane, E. O., and Schluter, M., Phys. Rev. B
21, 5662 (1980); G. D. Watkins and J. R. Troxell, Phys. Rev. Lett. 44, 593 (1980).CrossRefGoogle Scholar