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Defect Reduction in Cd1−xZnxTe Epilayers on GaAs Substrates

Published online by Cambridge University Press:  21 February 2011

Saket Chadda ,
Kevin Malloy  and
John Reno
Saket Chadda
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87131
Kevin Malloy
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87131
John Reno
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

Cd0.91Zn0.09Te/CdTe multilayers of various period thicknesses were inserted into Cd0.955Zn0.045Te bulk alloys grown on (001) GaAs. The net strain of the multilayer on the underlying Cd0.955Zn0.045Te was designed to be zero. X-ray diffraction full width at half maximum (FWHM) was used as a means to optimize the period thickness of the multilayer. Transmission electron microscopy of the optimum period thickness samples demonstrated four orders of magnitude decrease in the threading dislocation density. Mechanism of bending by equi-strained multilayers is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 439
Copyright
Copyright © Materials Research Society 1993

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References

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