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Defect production during ion-assisted deposition of molybdenum films studied by molecular dynamics

Published online by Cambridge University Press:  10 February 2011

Peter Klaver  and
Barend Thijsse
Peter Klaver
Affiliation:
Laboratory of Materials Science, Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft, Netherlands
Barend Thijsse
Affiliation:
Laboratory of Materials Science, Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft, Netherlands
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Abstract

Low energy argon-ion assisted growth of thin molybdenum films (∼ 60 Å) has been studied by molecular dynamics simulations. The effects of a single ion impact are discussed, but more particularly we consider film growth from a manufacturing viewpoint and examine the properties of the completed films. Results for ion-beam assisted deposition are compared with those for unassisted growth (i.e. physical vapor deposition). Surface morphology, defect generation, argon incorporation, and the various responsible atomic mechanisms are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 504: Symposium KK – Atomistic Mechanisms in Beam Synthesis & Irradiation… , 1997 , 51
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Smidt, F.A., Int. Mater. Reviews 35, 61 (1990).Google Scholar
2. Esch, S., Breeman, M., Morgenstern, M., Michely, T., and Comsa, G., Surf. Sci. 365, 187 (1996).Google Scholar
3. Was, G.S., Srolovitz, D.J., Ma, Z., and Liang, D., Mat. Res. Soc. Symp. Proc. 441, 311 (1997).Google Scholar
4. Atwater, H.A., Solid State Phenomena 27, 67 (1992).Google Scholar
5. van der Kuur, J., Melker, E.J., Huijgen, T.P., Hoondert, W.H.B., Bekking, G.T.W.M., van den Beukel, A., and Thijsse, B.J., Mat. Res. Soc. Symp. Proc. 396, 587 (1996); J. van der Kuur et al., this conference.Google Scholar
6. Robbemond, A. and Thijsse, B.J., Nucl. Instr. Meth. B 127/128, 273 (1997)Google Scholar
7. Johnson, R.A. and Oh, D.J., J. Mater. Res. 4, 1195 (1989).Google Scholar
8. Eckstein, W., Computer Simulation of Ion-Solid Interactions (Springer, Berlin, 1991).Google Scholar