Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-29T09:35:59.611Z Has data issue: false hasContentIssue false
  • English
  • Français

Defect Levels in the Near-Surface Region of 2.0 MeV 16O+ Ion Implanted n-GaAs.

Published online by Cambridge University Press:  25 February 2011

C.C. Tin ,
P.A. Barnes ,
T.T. Bardin  and
J.G. Pronko
C.C. Tin
Affiliation:
Department of Physics, 206 Allison Laboratory, Auburn University, AL S6849.
P.A. Barnes
Affiliation:
Department of Physics, 206 Allison Laboratory, Auburn University, AL S6849.
T.T. Bardin
Affiliation:
Lockheed Missiles and Space Company, Inc., Research & Development Diυ., D91-10, B203, S251 Hanover Street, Palo Alto, CA 94304.
J.G. Pronko
Affiliation:
Lockheed Missiles and Space Company, Inc., Research & Development Diυ., D91-10, B203, S251 Hanover Street, Palo Alto, CA 94304.
Get access

Abstract

MeV ion implantation in GaAs is known to cause amorphization of the region at the end of the ion range. The near-surface region, however, is still crystalline albeit heavily compensated. We have carried out deep level transient spectroscopy (DLTS) studies of the defect levels in the near—surface region of n—GaAs samples implanted with different doses of 2.0 MeV 16O+ ions.

A comparison between the defect structures in the original and the implanted samples shows that implantation produced a broad range of defect levels ranging from 0.58 to 0.3 eV from the conduction band edge. This broad range of defects has an unusually large capture cross—section. The intensities of the DLTS peaks increase with the dose of 160+ ions. The presence of EL2, which was present in the original samples, was not observed in the implanted samples.

Results from measurements made on samples that have been implanted at 200°C and on implanted samples subjected to rapid thermal annealing will also be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 979
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Stephens, K.G., Nucl. Instr. and Meth. 209/210, 589 (1983).Google Scholar
2 Pearton, S.J., Poate, J.M., Sette, F., Gibson, J.M., Jacobson, D.C., and Williams, J.S., Nucl. Instr. and Meth. B19/20, 369 (1987).Google Scholar
3 Pearton, S.J., Solid State Phenomena 1/2, 247 (1988).Google Scholar
4 Donnely, J.P., Inst. Phys. Conf. Ser. 33b, 166 (1977).Google Scholar
5 Favennec, P.N., J. Appl. Phys. 47, 2532 (1976).Google Scholar
6 Itoh, T., Tsuchiya, T., and Takeuchi, M., Jpn. J. Appl. Phys. 15, 2277 (1976).Google Scholar
7 Sadana, D.K., Nucl. Instr. and Meth. B7/8, 375 (1985).Google Scholar
8 Bardin, T.T., Pronko, J.G., Junga, F.A., Opyd, W.G., Mardinly, A.J., Xiong, F., and Tombrello, T.A., Nucl. Instr. and Meth. B24/25, 548 (1987).Google Scholar
9 Lang, D.V., Inst. Phys. Conf. Ser. 31, 71 (1977).Google Scholar
10 Asano, T., Atanassov, R.D., Ishiwara, H., and Furukawa, S., Jpn. J. Appl. Phys. 20, 901 (1981).Google Scholar
11 Lang, D.V., J. Appl. Phys. 45, 3023 (1974).Google Scholar
12 Tin, C.C. and Barnes, P.A., J. Appl. Phys. 66, 223 (1989).Google Scholar
13 Miller, G.L., Ramirez, J.V., and Robinson, D.A.H., J. Appl. Phys. 46, 2638 (1975).Google Scholar
14 Martin, G.M., Secordel, P., and Venger, C., J. Appl. Phys. 53, 8706 (1982).Google Scholar
15 Martin, G.M., Esteve, E., Langlade, P., and Makram-Ebeid, S., J. Appl. Phys. 56,2655 (1984).Google Scholar
16 Lang, D.V., Kimerling, L.C., and Leung, S.Y., J. Appl. Phys. 47, 3587 (1976).Google Scholar
17 Samitier, J., Morante, J.R., Giraudet, L., and Gourrier, S., Appl. Phys. Lett. 48, 1138 (1986).Google Scholar
18 Perez, A., Samitier, J., Romano, A., and Morante, J.R., in Semi-insulating III–V Materials, Malmö, 1988, edited by Grossman, G. and Ledebo, L. (IOP, England, 1988), p. 81.Google Scholar
19 Martin, G.M., Mitonneau, A., and Mircea, A., Electron. Lett. 13, 191 (1977).Google Scholar
20 Levinson, M., Inst. Phys. Conf. Ser. 91, 73 (1988).Google Scholar
21 Mitonneau, A., Martin, G.M., and Mircea, A., Electron. Lett. 13, 666 (1977).Google Scholar
22 Hutchinson, P.W., Ball, R.K., Dobson, P.S., and Leigh, P., J. Mater. Sci. Lett. 1, 457 (1982).Google Scholar