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Defect Kinetics and Saturation in Amorphous Silicon-Germanium Alloys

Published online by Cambridge University Press:  21 February 2011

G. Schumm ,
C.-D. Abel  and
G.H. Bauer
G. Schumm
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, F.R. Germany
C.-D. Abel
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, F.R. Germany
G.H. Bauer
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, F.R. Germany
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Abstract

A quantitative comparison of defect kinetics under high-intensity light-soaking was carried out on a-Si:H and a-SiGe:H. A simple technique that ensures identical experimental conditions (generation rates and generation profiles) in samples of different bandgaps is demonstrated. It is shown that the apparent dependence on bandgap of the susceptibility to light-induced degradation is mainly due to changes in intrinsic carrier concentrations without the need to adhere to any structural changes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 505
Copyright
Copyright © Materials Research Society 1992

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References

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