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Defect Induced Luminescence from MBE Prepared Si/Si1-xGex Superlattices†

Published online by Cambridge University Press:  25 February 2011

G.A. Northrop ,
S.S. Iyer  and
D.J. Wolford
G.A. Northrop
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598.
S.S. Iyer
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598.
D.J. Wolford
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598.
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Abstract

We report the first definitive observation of photoluminescence from Si/Si1-xGex superlattice heterostructures. Excitons bound to a deep-level radiation damage center (I1) are observed in a series of low Ge content (x = 0.05) unrelaxed structures. We also present preliminary results on photoluminescence from as-grown narrow period (Si6Ge4) superlattices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 343
Copyright
Copyright © Materials Research Society 1990

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Footnotes

†

Supported in part by the U.S. Office of Naval Research under contract N00014-85-C-0868.

References

1 See for example Patton, G.L., Iyer, S.S., Delage, S.L., Tiwari, S., and Stork, J.M.C., IEEE Elect. Dev. Lett. 9, 165 (1988).Google Scholar
2 Weber, J. and Alonso, M.I., Phys. Rev. B40, 5683 (1989).Google Scholar
3 Northrop, G.A., Iyer, S.S., Wolford, D.J., and Delage, S.L., Proceedings of the 19th International Conference on the Physics of Semiconductors (DHN Ltd., Warsaw 1988).Google Scholar
4 Morrison, I. and Jaros, M., Phys. Rev. B37, 916 (1988).Google Scholar
5 Satpathy, S., Martin, R.M., and Van de Walle, C.G., Phys. Rev. B38, 13237 (1988).Google Scholar
6 Froyen, S., Wood, D.M., and Zunger, A., Phys. Rev. B37, 6893 (1988).Google Scholar
7 Abstreiter, G., Eberl, K., Friess, E., Wegscheider, W., and Zachai, R., J. Cryst. Growth 95,431 (1989).Google Scholar
8 Davies, Gordon, Lightowlers, E.C., and Ciechanowska, Zofia E., J. Phys. C20, 191 (1987).Google Scholar
9 For a recent review of luminescing deep levels in silicon see: Davies, Gordon, Physics Reports 176, 84(1989).Google Scholar
10 Davies, G., Oates, A.S., Newman, R.C., Woolley, R., Lightowlers, E.C., Binns, M.J., and Wilkes, J.G., J. Phys. C176, 841 (1986).Google Scholar
11 Burger, N., Irion, E., Teschner, A. Thonke, K., and Sauer, R., Phys. Rev. B35, 3804 (1987).Google Scholar
12 Sauer, R., Weber, J., Stolz, J., Weber, E.R., Küsters, K.-H., and Alexander, H., Appl. Phys. A 36, 1 (1985).Google Scholar
13 Hamilton, B., Sidebotham, E.C., Peaker, A.R., Parker, E.H.C., Patel, G. and Whall, T.E., Proceedings of the Second International Symposium on MBE Si, ed. by J.C. Bean and L.J. Schowalter, (Electrochemical Society), p. 355, (1988).Google Scholar