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Defect Growth Interruption Phenomena Related to Impurity Atoms in Growing Multilayer Si-Si1−x Gex Systems Deposited by APCVD

Published online by Cambridge University Press:  21 February 2011

I. Babanskaya ,
G. Lippert ,
D. KrÜger ,
M. Methfessel ,
G. Morgenstern  and
T. Morgenstern
I. Babanskaya
Affiliation:
Institute of Semiconductor Physics, Frankfurt (Oder), Germany
G. Lippert
Affiliation:
Institute of Semiconductor Physics, Frankfurt (Oder), Germany
D. KrÜger
Affiliation:
Institute of Semiconductor Physics, Frankfurt (Oder), Germany
M. Methfessel
Affiliation:
Institute of Semiconductor Physics, Frankfurt (Oder), Germany
G. Morgenstern
Affiliation:
Institute of Semiconductor Physics, Frankfurt (Oder), Germany
T. Morgenstern
Affiliation:
Institute of Semiconductor Physics, Frankfurt (Oder), Germany
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Abstract

The present paper examines conditions which can lead to generation or blocking of structural defects as observed in the deposition of the Si-Si1−x Gex heterostructures prepared by conventional AP CVD. The lowering of the epitaxial temperature can lead to a breakdown of the epitaxial growth and to a generation of defects such as dendritically grown polycrystalline inclusions. Their generation depends on the moisture and oxygen content in the gas mixture. Fast cooling during growth of the underlying buffer layer leads to defect growth interruption and is attributed to the influence of hydrogen adsorption / desorption. A similar defect growth blocking has been found by addition of diborane to the gas mixture during CVD deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 319: Symposia CB – Defect-Interface Interactions , 1993 , 171
Copyright
Copyright © Materials Research Society 1994

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