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Defect Characterization by Junction Spectroscopy

Published online by Cambridge University Press:  15 February 2011

L. C. Kimerling
L. C. Kimerling*
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

Junction spectroscopic techniques provide a unique tool for the study of imperfections in semiconductor materials. New, fundamental defect processes have been discovered and direct observations of the role of defects in device manufacture and operation have been made. The principles of application of capacitance transient spectroscopy, electroluminescence, and SEM-charge collection microscopy are briefly reviewed. Examples of singular accomplishments of these techniques are given, and directions of future research are outlined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 85
Copyright
Copyright © Materials Research Society 1981

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References

REFERENCES

1. Sze, S. M., Physics of Semiconductor Devices (Wiley-Interscience, New York 1969).Google Scholar
2. Moll, J. L., Physics of Semiconductors (McGraw Hill, New York 1964).Google Scholar
3. Sah, C. T., Forbes, L., Rosier, L. L. and Tasch, A. F. Jr., Solid-St. Electron. 13, 759 (1970).Google Scholar
4. Miller, G. L., Lang, D. V. and Kimerling, L. C., Ann. Rev. Mater. Sci. 7, 377 (1977).CrossRefGoogle Scholar
5. Grimmeiss, H. G., Ann. Rev. Mater. Sci. 7, 341 (1977).Google Scholar
6. Kimerling, L. C. in: Physics of Semiconductors 1978 (Inst. Phys. Conf. Ser. No. 43, 1979) pp. 113–122.Google Scholar
7. Lang, D. V. in: Topics in Applied Physics, Volume 37 (Springer-Verlag, Berlin 1979) pp. 93–133.Google Scholar
8. Chen, J. W. and Milnes, A. G., Ann. Rev. Mater. Sci. 10, 157 (1980).CrossRefGoogle Scholar
9. Henry, C. H., Kukimoto, H., Miller, G. L. and Merritt, F. R., Phys. Rev. B7, 2486 (1973).Google Scholar
10. Lang, D. V., J. Appl. Phys. 45, 3023 (1974).CrossRefGoogle Scholar
11. Miller, G. L., Ramirez, J. V. and Robinson, D. A. H., J. Appl. Phys. 46, 2638 (1975).CrossRefGoogle Scholar
12. Kimerling, L. C., IEEE Trans. Nucl. Sci. NS–23, 1497 (1976).CrossRefGoogle Scholar
13. White, A. M. in: Physics of Semiconductors 1978 (Inst. Phys. Conf. Ser. No. 43, 1979) pp. 123–132.Google Scholar
14. Bois, D., Chantre, A., Vincent, G. and Nouailhat, A. in: Physics of Semiconductors 1978 (Inst. Phys. Conf. Ser. No. 43, 1979) pp. 295–298.Google Scholar
15. Lang, D. V. and Henry, C. H., Solid St. Electronics 21, 1519 (1978).CrossRefGoogle Scholar
16. Kimerling, L. C., Leamy, H. J., Benton, J. L., Ferris, S. D., Freeland, P. E. and Rubin, J. J. in: Semiconductor Silicon/1977 (Electrochem. Soc., Princeton 1977) pp. 468–480.Google Scholar
17. Kimerling, L. C., Leamy, H. J. and Patel, J. R., Apply Phys. Lett. 30 217 (1977).Google Scholar
18. Petroff, P. M. and Lang, D. V., Appl. Phys. Lett. 31, 60 (1977).Google Scholar
19. Chi, J. Y. and Gatos, H. C., J. Appl. Phys. 50, 3433 (1978).Google Scholar
20. Donolato, C., Appl. Phys. Lett. 34, 80 (1979).Google Scholar
21. Petroff, P. M., Logan, R. A. and Savage, A., Phys. Rev. Lett. 44 287 (1980).Google Scholar
22. Miller, G. L., Robinson, D. A. H. and Ferris, S. D. in: Semiconductor Characterization Methods, Barnes, P. A. and Roygonyi, G. A. eds. (Electrochem. Soc., Princeton 1978) pp. 1–31.Google Scholar
23. Varker, C. J. in: Nondestructive Evaluation of Semiconductor Materials and Devices, Zemel, J. N. ed. (Plenum, New York 1979).Google Scholar
24. Leamy, H. J. in: Physical Electron Microscopy, Wells, O. C., Heinrich, K. F. J. and Newberry, D. E. eds. (Van Nostrand Reinhold, New York 1981).Google Scholar
25. Barnes, C. E., J. Electronic Mater. 7 589 (1978).CrossRefGoogle Scholar
26. Metz, S., Appl. Phys. Lett. 33, 198 (1978).CrossRefGoogle Scholar
27. Weber, J., Schmid, W., Sauer, R. and Pilkuhn, M. H., 22nd Electronic Materials Conference AIME, Cornell 1980.Google Scholar
28. Kimerling, L. C. and Benton, J. L., to be published.Google Scholar
29. Kimerling, L. C. and Benton, J. L. in: Extended Abstract of the 158th Electrochemical Society General Meeting, Holywood, Florida (Electrochem. Soc., Princeton 1980) pp. 415–417.Google Scholar
30. Ludwig, G. W. and Woodbury, H. H. in: Solid State Physics, 13 (Academic Press, New York 1962) p. 223.Google Scholar
31. Gerson, J. D., Cheng, L. J. and Corbett, J. W., J. Appl. Phys. 48 4821 (1977).CrossRefGoogle Scholar
32. Feichtinger, H. in: Defects and Radiation Effects in Semiconductor 1978 (Inst. Phys. Conf. Ser. 46, London 1979) p. 528.Google Scholar
33. Graff, K. and Pieper, H., to be published.Google Scholar
34. Kimerling, L. C., Benton, J. L. and Rubin, J. J. in: Defects in Semiconductors 1980 (Institute of Physics, London 1981).Google Scholar
35. Struthers, J. D., J. Appl. Phys. 27, 1560 (1956).CrossRefGoogle Scholar
36. Collins, C. B. and Carlson, R. O., Phys. Rev. 108, 1409 (1957).CrossRefGoogle Scholar
37. Ballamy, W. C. and Kimerling, L. C., IEEE Trans. Electron Dev. ED–25, 746 (1978).Google Scholar
38. Kimerling, L. C. in: Defects and Radiation Effects in Semiconductors 1976 (Inst. Phys. Conf. Ser. No. 31, London 1977) pp. 221–230.Google Scholar
39. Watkins, G. D., this volume.Google Scholar