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Defect and Stress Control of Algan and Fabrication of High-Efficiency Uv-Led

Published online by Cambridge University Press:  17 March 2011

H. Amano ,
M. Iwaya ,
S. Nitta ,
S. Terao ,
R. Nakamura ,
T. Ukai ,
S. Saitoh ,
S. Kamiyama ,
C. Wetzel  and
I. Akasaki
H. Amano
Affiliation:
High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
M. Iwaya
Affiliation:
High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
S. Nitta
Affiliation:
High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
S. Terao
Affiliation:
High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
R. Nakamura
Affiliation:
High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
T. Ukai
Affiliation:
High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
S. Saitoh
Affiliation:
High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
S. Kamiyama
Affiliation:
High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
C. Wetzel
Affiliation:
High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
I. Akasaki
Affiliation:
High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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Abstract

Defects and stress are the most serious issues for growth of AlGaN. Low-temperature deposited (LT -) AlN interlayer between AlGaN and GaN is found to reduce tensile stress during growth, and at the same time suppress the propagation of dislocations having screw components, by which UV-photodetector showing very-low-dark current has been successfully fabricated. However, additional pure-edge dislocations are generated at the LT -interlayer, which resulted in the poor emission property. In addition to the LT -interlayer, lateral growth at the trenched structure was used, thereby achieving crack-free AlGaN and reduction of the density of all types of dislocations in the AlGaN layer. UV light emitting diodes having AlGaN/GaN multi-quantum well active layer was fabricated on the low dislocation density AlGaN. The LED shows strong and sharp UV-emission from GaN-wells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G12.7
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Amano, H., Sawaki, N., Akasaki, I. and Toyoda, Y.: Appl. Phys. Lett., 48 (1986) 353.Google Scholar
2. Amano, H. and Akasaki, I.: Mat. Res. Soc. Ext Abst., EA–21 (1991) 165.Google Scholar
3. Amano, H., Kitoh, M., Hiramatsu, K. and Akasaki, I.: J. Electrochem. Soc., 137 (1990) 1639.Google Scholar
4. Amano, H., Kito, M., Hiramatsu, K. and Akasaki, I.: Jpn. J. Appl. Phys. 28 (1989) L2112.Google Scholar
5. Koide, Y., Koide, Y., Itoh, N., Itoh, K., Sawaki, N. and Akasaki, I.: Jpn. J. Appl. Phys. 27 (1988) 1156.Google Scholar
6. Itoh, K., Doctor Thesis, Faculty Electric Engineering, Nagoya University, Nagoya, (1991).Google Scholar
7. Terao, S., Iwaya, M., Nakamura, R., Kamiyama, S., Amano, H. and Akasaki, Isamu, Jpn.J.Appl.Phys., (2001) (To be published).Google Scholar
8. Iwaya, M., Takeuchi, T., Yamaguchi, S., Wetzel, C., Amano, H. and Akasaki, I., Jpn. J. Appl. Phys. 37 (1998) L316.Google Scholar
9. Floro, J., Chason, E., Lee, S., Twesten, R., Hwang, R. and Freud, L., J. Electron. Mater., 26 (1997) 969.Google Scholar
10. Kashima, T., Nakamura, R., Iwaya, M., Katoh, H., Yamaguchi, S., Amano, H. and Akasaki, I., Jpn. J. Appl. Phys., 38 (1999) L1515.Google Scholar
11. Hirano, A., Pernot, C., Iwaya, M., Detchprohm, T., Amano, H. and Akasaki, I., IPAP Conf. Ser. 1 (2000)911.Google Scholar
12. Usui, A., Sunakawa, H., Sakai, A. and Yamaguchi, A. A.: Jpn. J. Appl. Phys. 36 (1997) L899.Google Scholar
13. Gehrke, T., Linthicum, K.J., Thomson, D.B., Rajagopal, P., Batchelor, A.D., Davis, R.F.: MRS Internet J. Nitride Semicond. Res. 4S1 (1999) G3.2.Google Scholar
14. Ujiie, Y. and Nishinaga, T., Jpn. J. Appl. Phys., 28 (1989) L337.Google Scholar
15.For example, “Introduction to Dislocations”, Hull, D. and Bacon, D. J., 3rd Edition, Butterworth Heinemann, 1984, p.192.Google Scholar
16. Sakai, A., Sunakawa, H. and Usui, A., Appl. Phys. Lett., 71 (1997)2259.Google Scholar
17. Iwaya, M., Nakamura, R., Terao, S., Ukai, T., Kamiyama, S., Amano, H. and Akasaki, I., IPAP Conf. Ser. 1 (2000)833.Google Scholar