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Deep-level luminescence at 1.0 eV in 6H SiC

Published online by Cambridge University Press:  21 March 2011

B. Magnusson ,
A. Ellison ,
N. T. Son  and
E. Janzén
B. Magnusson
Affiliation:
Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
A. Ellison
Affiliation:
Okmetic AB, Hans Meijers väg 2, SE-581 83 Linköping, Sweden
N. T. Son
Affiliation:
Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
E. Janzén
Affiliation:
Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
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Abstract

Results from photoluminescence (PL) and Zeeman effect measurements of a PL center, labeled UD-1, in 6H SiC are presented. The spectrum consists of three no phonon-lines (NPLs) at 0.9952, 1.0015 and 1.0020 eV. The luminescence starts decreasing in intensity above 40 K and is completely quenched at 80 K. The observed Zeeman splitting reveals a spin one half of the ground state of the two highest energy lines. No splitting of the 0.9952 eV line is detected. The g║-value for the 1.0015 eV and 1.0020 e║ lines are g║ = 1:4 and g║ = 1:7, respectively. For both lines, g⊥ = 0. The C3v symmetry indicates that the UD-1 center is either a substitutional defect or a complex with its constituents lying along the c-axis of the lattice.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H7.11
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Ellison, A., Zhang, J., Magnusson, W., Henry, A., Wahab, Q., Bergman, J.P., Hemmingsson, C., Son, N.T., and Janzén, E., Mater. Sci. Forum, 338–342, 131 (2000).Google Scholar
2. Ellison, A., Hemmingsson, C., Magnusson, B., Henry, A., Wahab, N.T. Son Q., and Janzén, E., Proc. of UPD2000, Nara, Japan, May 31- June 2, Extended Abstracts (2000).Google Scholar
3. Schneider, J., Müller, H. D., Maier, K., Wilkening, W., Fuchs, F., Dörnen, A., Leibenzeder, S., and Stein, R., Appl. Phys. Lett., 56, 1184 (1990).Google Scholar
4. Son, N.T., Ellison, A., Magnusson, B., MacMillan, M. F., Chen, W. M., Monemar, B., and Janzén, E., J. Appl. Phys., 86, 4348 (1999).Google Scholar