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Decomposition Study of Teos in Thermal Cvd

Published online by Cambridge University Press:  22 February 2011

Hideki Takeuchi ,
Hirohiko Izumi  and
Atsushi Kawasaki
Hideki Takeuchi
Affiliation:
Nippon Steel Corp., Semiconductor Division, Fuchinobe 5-10-1, Sagamihara, Kanagawa 229, Japan
Hirohiko Izumi
Affiliation:
Nippon Steel Corp., Semiconductor Division, Fuchinobe 5-10-1, Sagamihara, Kanagawa 229, Japan
Atsushi Kawasaki
Affiliation:
Nippon Steel Corp., Semiconductor Division, Fuchinobe 5-10-1, Sagamihara, Kanagawa 229, Japan
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Abstract

Thermal decomposition of tetraethoxysilane(TEOS) has been investigated in a vertical type LP-CVD reactor. The mass spectrum of reacting gas was found to have a feature corresponding to hexaethoxysiloxane ((H5C2O)3SiOSi(OC2H5)3). Trapped byproducts were found to include ethanol and ethoxy-based silica. Kinetic analysis of deposition rate profile indicated the existence of two intermediates. Feed gas residence time, as well as substrate temperature. directly affected the film quality.

A vapor phase reaction model was proposed to explain these results. According to this model. TEOS decomposes into ethylene and triethoxysilanol. The latter reacts with TEOS to form hexaethoxysiloxane as observed by mass spectrometry. The triethoxysilanol, hexaethoxysiloxane and TEOS should be actual deposition precursors. Similar reaction continues to form ethoxybased siloxane polymers which are trapped from the exhaust gas.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 45
Copyright
Copyright © Materials Research Society 1994

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References

1. Hazama, K., Tomioka, Y., Sato, Y., Iwasa, S., Anzai, K. and Wada, T., Extended Abstracts, 30pZV-6(The 40th Spring Meeting,1993); The Japan Society of Applied Physics and Related Societies.Google Scholar
2. Desu, S.B., J. Am. Ceram. Soc., 72, 1615(1989).Google Scholar
3. Kalidini, S.R. and Desu, S.B., J. Electrochem. Soc., 137,624(1990).Google Scholar
4. Desu, S.B. and Kalidini, S.R., Jpn. J. Appl. Phys., 29, 1310(1990).Google Scholar
5. Kalidini, S.R. and Desu, S.B., J. Electrochem. Soc., 138,962(1991).Google Scholar
6. Satake, T., Sorita, T., Fujioka, H., Adachi, H. and Nakajima, H., Extended Abstracts, 16p-ZQ-2 (The 53th Autumn Meeting, 1992); The Japan Society of Applied Physics.Google Scholar
7. Egashira, Y. and Komiyama, H. (private communication).Google Scholar