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Damage to Crystalline Silicon Following Implantation by Low Energy Silicon Ions

Published online by Cambridge University Press:  26 February 2011

Y. Levine ,
N. Herbots  and
S. Dunham
Y. Levine
Affiliation:
Boston University, Electrical, Computer and Systems Engineering Department, Boston, MA 02215
N. Herbots
Affiliation:
Arizona State University, Department of Physics and Astronomy, Tempe, AZ 85287
S. Dunham
Affiliation:
Boston University, Electrical, Computer and Systems Engineering Department, Boston, MA 02215
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Abstract

A new approach to investigate low energy defect formation and annealing in a crystal is developed, based on experimental observations of the total number of interstitials. The model is applied to damage in crystalline silicon caused by low energy implantation of Si-atoms during 40eV implants at 300°Kand 685°K. The model has two versions, analytical and computational, and includes two kinds of diffusing species, self-interstitials and vacancies, their interaction, surface motion of the growing crystal, and a constant source of defects. The source was calculated using a modified TRIM code (TRJMCSR). The focal point of the analysis is the number of interstitials per ion dose surviving at the end of the deposition time (damage to dose ratio or DDR, which is found to be an informative quantity and can be calculated for more sophisticated models including precipitation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 1037
Copyright
Copyright © Materials Research Society 1992

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References

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