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CVD-Growth of Thin-Film Layered Se-Carbon Compounds

Published online by Cambridge University Press:  15 February 2011

L. Grigorian
Affiliation:
Department of Physics and Astronomy and Center for Applied Energy Research, University of Kentucky, Lexington, KY 40506, [email protected]
S. Fang
Affiliation:
Department of Physics and Astronomy and Center for Applied Energy Research, University of Kentucky, Lexington, KY 40506, [email protected]
G. Sumanasekera
Affiliation:
Department of Physics and Astronomy and Center for Applied Energy Research, University of Kentucky, Lexington, KY 40506, [email protected]
A. M. Rao
Affiliation:
Department of Physics and Astronomy and Center for Applied Energy Research, University of Kentucky, Lexington, KY 40506, [email protected]
L. Schraderi
Affiliation:
University of the South, Sewanee, TN 37383
P. C. Eklund
Affiliation:
Department of Physics and Astronomy and Center for Applied Energy Research, University of Kentucky, Lexington, KY 40506, [email protected]
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Abstract

Oriented films of layered Se-carbon compounds are grown on Ni substrates in evacuated sealed quartz tubes. Results of X-ray diffraction, Raman scattering and the c-axis electrical transport studies are reported. A discussion of possible models for the carbon -Se interaction is presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Dresselhaus, M.S. and Dresselhaus, G., Advances in Physics 30 (1981) 139.Google Scholar
2. Solin, S. and Zabel, H., Eds. Graphite Intercalation Compounds, Springer-Verlag, Berlin, 1992.Google Scholar
3. Nakaya, H., et al. , European Patent Application #92301388.2 (1992).Google Scholar
4. Yoshimoto, Y., et al. , US Patent #5,273,778 (1993).Google Scholar
5. Yudasaka, M., et al. , Appl. Phys. Lett. 64 (1994) 842.Google Scholar
6. Eklund, P.C. and Mabatah, A.K., Rev. Sci. Instr. 48 (1977) 775.Google Scholar
7. Boca, M.H., Saylors, M.L., Smith, D.S. and Eklund, P.C., Synth. Metals 6 (1983) 39.Google Scholar
8. Malmsen, G., Thoren, I., Hogberg, S., Bergmark, J.E. and Karlsson, S.E., Phys. Scr. 3 (1971) 96.Google Scholar
9. Ubbelohde, A.R., Proc. Royal Soc. A 321 (1972) 445.Google Scholar
10. Foley, G., Zeller, C., Falardean, E.R. and Vogel, F.L., Solid State Commun. 24 (1977) 371.Google Scholar
11. Hennig, G., in Progress in Inorganic Chemistry, ed. Cotton, F., v.l, Intersci. Publ., NY, 1959.Google Scholar
12. Kittel, C., “Introduction to Solid State Physics”, John Wiley and Sons, Inc., New York, 1986.Google Scholar