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CVD of Copper from (β-Diketonate)CuLn Copper(I) Precursors

Published online by Cambridge University Press:  25 February 2011

Kai-Ming Chi ,
A. Jain ,
M. J. Hampden-Smith  and
T. T. Kodas
Kai-Ming Chi
Affiliation:
Department of Chemistry, University of New Mexico, Albuquerque, NM 87131
A. Jain
Affiliation:
Department of Chemical Engineering, University of New Mexico, Albuquerque, NM 87131
M. J. Hampden-Smith
Affiliation:
Department of Chemistry, University of New Mexico, Albuquerque, NM 87131 Center for Micro-Engineered Ceramics, University of New Mexico, Albuquerque, NM 87131
T. T. Kodas
Affiliation:
Department of Chemical Engineering, University of New Mexico, Albuquerque, NM 87131 Center for Micro-Engineered Ceramics, University of New Mexico, Albuquerque, NM 87131
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Abstract

Selective chemical vapor deposition (CVD) of copper is the focus of recent research interest as a result of possible applications as vertical interconnect material in multilevel metallization. A variety of copper(I) and copper(II) compounds have been used to deposit copper. In some cases, the compounds selectively deposit copper on various different surfaces. However, the origin of this selectivity is not unambiguously established at this stage. In order to derive a better understanding of the CVD processes, a series of copper(I) compounds (β-diketonate)CuLn have been synthesized and used as CVD precursors. The new species (fod)CuL, where fod = 2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedionate and L = PMe3, 1,5-COD, 2-butyne, BTMSA and VTMS (as defined below) are described. The CVD of copper and factors affecting selective copper deposition are discussed here.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 629
Copyright
Copyright © Materials Research Society 1992

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References

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