Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-20T01:03:59.597Z Has data issue: false hasContentIssue false
  • English
  • Français

CVD growth of Si Nanocrystals on Dielectric Surfaces for Nanocrystal Floating Gate Memory Application

Published online by Cambridge University Press:  17 March 2011

Sucharita Madhukar ,
K. Smith ,
R. Muralidhar ,
D. O'Meara ,
M. Sadd ,
B-Y. Nguyen ,
B. White  and
B. Jones
Sucharita Madhukar
Affiliation:
Materials and Structures laboratory, Digital DNA Labs, Motorola SPS, Austin TX
K. Smith
Affiliation:
Materials and Structures laboratory, Digital DNA Labs, Motorola SPS, Austin TX
R. Muralidhar
Affiliation:
Materials and Structures laboratory, Digital DNA Labs, Motorola SPS, Austin TX
D. O'Meara
Affiliation:
Materials and Structures laboratory, Digital DNA Labs, Motorola SPS, Austin TX
M. Sadd
Affiliation:
Materials and Structures laboratory, Digital DNA Labs, Motorola SPS, Austin TX
B-Y. Nguyen
Affiliation:
Materials and Structures laboratory, Digital DNA Labs, Motorola SPS, Austin TX
B. White
Affiliation:
Materials and Structures laboratory, Digital DNA Labs, Motorola SPS, Austin TX
B. Jones
Affiliation:
Materials and Structures laboratory, Digital DNA Labs, Motorola SPS, Austin TX
Get access

Abstract

Initial stages of growth of silicon on dielectric surface proceeds through Volmer-Webber growth mode (through island formation) and coalescence of islands to form a continuous thin film layer. Growth of silicon nanocrystals on dielectric surface can be achieved by controlling the nucleation and growth kinetics of these nanocrystals on the dielectric surface. In this study, we present CVD growth of Si nanocrystals on oxide, oxynitride and nitride surfaces using silane based chemistry. The effect of process conditions such as deposition temperature, precursor flow rate, carrier gas on nanocrystal incubation time, size and density of nanocrystals was studied. The nucleation and growth rate of the silicon nanocrystals is also a strong function of the surface chemistry, surface structure and strain in the dielectric film. We have studied the effect of oxide deposition temperature and surface pretreatments on the nucleation and growth characteristics of the silicon nanocrystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F5.2.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1) Takahashi, Y., Nagase, M., Namatsu, H., Kurihara, K., Iwdate, K., Nakajima, Y., Horiguchi, S., Murase, K. and Tabe, M., International Electron Devices Meeting 1994. Technical Digest, pp.938–40.Google Scholar
2) Tiwari, S., Rana, F., Hanafi, H., Hartein, H., Crabbe, E.F. and Chan, K., Appl. Phys. Lett., 68, 1377(1996).Google Scholar
3) Fukuda, M., Nakagawa, K., Miyazaki, S., and Hirose, M., Appl. Phys. Lett., 70, 2291(1997).Google Scholar
4) Tiwari, S., Rana, F., Chan, K., Shi, Leathen and Hanafi, H., Appl. Phys. Lett., 69, 1232–4 26 ( 1996)Google Scholar
5) Heinig, K.H., Schmidt, B., Markwitz, A., Grotzchel, R., Strobel, M. and Oswald, S., Nuclear Instruments and Methods in Physics Research B 148, 969(1999).Google Scholar
6) Wakayama, Y., Tagami, T. and Tanaka, S., Thin Solid Films 350, 300(1999).Google Scholar
7) Charvet, S., Madelon, R., Rizk, R., Garrido, B., Perez-Rodriguez, A., Lopez, M., Gonzalez, O. and Morante, J.R., Proceeding of Materials Research Society, 486 225(1998).Google Scholar
8) Nobuyasu, S., Makino, T., Yamada, Y., Yoshida, T., and Onari, S., Appl. Phys. Lett., 76,1389(2000).Google Scholar
9) Baron, T., Martin, F., Mur, P., Wyon, C., Dupuy, M., Busseret, C., Souifi, A. and Guillot, G., Proceeding of Materials Research Society, Spring 1999.Google Scholar
10) Miyazaki, S., Hamamoto, Y., Yoshida, E., Ikeda, M. and Hirose, M., Workshop on Si nanofabrication and nanodevices, Tokyo, 1,(1999).Google Scholar