Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-19T07:36:54.566Z Has data issue: false hasContentIssue false
  • English
  • Français

Cure of Hydrogen Silsesquioxane for Intermetal Dielectric Applications

Published online by Cambridge University Press:  15 February 2011

J.N. Bremme ,
Y. Liu ,
K.G. Gruszynski  and
F.C. Dall
J.N. Bremme
Affiliation:
Dow Corning Corporation M/S C041A1 P.O. Box 944, Midland MI 48686–0994
Y. Liu
Affiliation:
Dow Corning Corporation M/S C041A1 P.O. Box 944, Midland MI 48686–0994
K.G. Gruszynski
Affiliation:
Dow Corning Corporation M/S C041A1 P.O. Box 944, Midland MI 48686–0994
F.C. Dall
Affiliation:
Dow Corning Corporation M/S C041A1 P.O. Box 944, Midland MI 48686–0994
Get access

Abstract

Cure is a significant process during back end of the line fabrication of integrated circuits with hydrogen silsesquioxane since it affects structure and properties of the spin on dielectric material. Reported herein is the effect of soak temperature, time, and oxygen concentration process parameters on structure and properties of hydrogen silsesquioxane. Results of the study emphasize the importance of an inert environment during the baseline recommended cure conditions of 400 °C for one hour in order to avoid oxidation and formation of polar silanol or water species. A 350 °C cure temperature is more robust to oxidation providing similar or improved properties. Shorter cure times result in similar structure and properties as the baseline cure which suggests that lower temperature and/or shorter cure time may provide value worth investigating by integrated circuit manufacturers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 476: Symposium N – Low-Dielectric Constant Materials III , 1997 , 37
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] David, K., Bohr, M., Chip Interconnect Short Course, Semicon West 96, July 17, 1996.Google Scholar
[2] Ting, C.H., Seidel, T.E., Mat. Res. Soc. Symp. Proc. Vol. 381, San Francisco, CA, April 17–19, 1995.Google Scholar
[3] Ahlburn, B.T., Jung, S.P., et al. , Advanced Metallization and Interconnect Systems for ULSI Applications, Portland, OR, October 1995.Google Scholar
[4] Pliskin, W.A., J. Vac. Sci. Technol., Vol. 14, No. 5, Sept./Oct. 1977.Google Scholar
[5] Belot, V., Corriu, R., Chem. Mater., Vol. 3, No. 1, 1991 Google Scholar