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Cu(In,Ga)S2 Phase Formation from Metallic Cu-In-Ga Precursor Stacks in Rapid Thermal Processes

Published online by Cambridge University Press:  21 March 2011

Axel Neisser ,
Jacobo Álvarez-García ,
Lorenzo Calvo-Barrio ,
Reiner Klenk ,
Thomas W. Matthes ,
Ilka Luck ,
Martha Ch. Lux-Steiner ,
Alejandro Pérez-Rodríguez  and
J.R. Morante
Axel Neisser
Affiliation:
Hahn-Meitner-Institut Berlin GmbH, Glienicker Strasse 100, D - 14 109 Berlin, Germany
Jacobo Álvarez-García
Affiliation:
Lab. Enginyeria i Materials Electrònics (EME), Unitat Associada CNM-CSIC, Departament d' Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, 08028 Barcelona, Spain
Lorenzo Calvo-Barrio
Affiliation:
Lab. Enginyeria i Materials Electrònics (EME), Unitat Associada CNM-CSIC, Departament d' Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, 08028 Barcelona, Spain
Reiner Klenk
Affiliation:
Hahn-Meitner-Institut Berlin GmbH, Glienicker Strasse 100, D - 14 109 Berlin, Germany
Thomas W. Matthes
Affiliation:
Hahn-Meitner-Institut Berlin GmbH, Glienicker Strasse 100, D - 14 109 Berlin, Germany
Ilka Luck
Affiliation:
Hahn-Meitner-Institut Berlin GmbH, Glienicker Strasse 100, D - 14 109 Berlin, Germany
Martha Ch. Lux-Steiner
Affiliation:
Hahn-Meitner-Institut Berlin GmbH, Glienicker Strasse 100, D - 14 109 Berlin, Germany
Alejandro Pérez-Rodríguez
Affiliation:
Lab. Enginyeria i Materials Electrònics (EME), Unitat Associada CNM-CSIC, Departament d' Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, 08028 Barcelona, Spain
J.R. Morante
Affiliation:
Lab. Enginyeria i Materials Electrònics (EME), Unitat Associada CNM-CSIC, Departament d' Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, 08028 Barcelona, Spain
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Abstract

This contribution compares the growth of Cu(Ga,In)S2 based thin film solar cell absorbers in rapid thermal systems using sulfur vapor Sx or H2S/Ar as reactive atmosphere, focusing on Ga-related influences on film growth and phase formation. Cu-In alloying in the precursor is kinetically hindered by the presence of Cu-Ga phases. In sulfur vapor Ga-containing samples sulfurize via an intermediate CuIn2S8 phase, thereby delaying the full sulfurization and recrystallization of the layer. In contrast, in H2S/Ar fast Ga-In interdiffusion and no intermediate chalcogenide phases are observed. The inhomogeneous Ga depth distribution usually reported for sequentially prepared Cu(In,Ga)S2 films can be assigned to the segregation of CuGaS2 prior to CuInS2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H1.3
Copyright
Copyright © Materials Research Society 2001

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References

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