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Cubic Inn Inclusions as the Cause for the Unusually Weak Pressure Shift of the Luminescence in InGaN

Published online by Cambridge University Press:  10 February 2011

Piotr Perlin ,
Bernard A. Weinstein ,
Niels E. Christensen ,
Iza Gorczyca ,
Valentin Iota ,
Tadeusz Suski ,
Przemek Wisniewski ,
M. Osinski  and
P. G. Eliseev
Piotr Perlin
Affiliation:
Lawrence Berkeley Laboratory and University of California at Berkeley, Berkeley CA 94720
Bernard A. Weinstein
Affiliation:
Physics Department SUNY at Buffalo
Niels E. Christensen
Affiliation:
Institute of Physics and Astronomy, Aarhus University, Denmark
Iza Gorczyca
Affiliation:
High Pressure Research Center, Polish Academy of Sciences, Warszawa, Poland
Valentin Iota
Affiliation:
Physics Department SUNY at Buffalo
Tadeusz Suski
Affiliation:
High Pressure Research Center, Polish Academy of Sciences, Warszawa, Poland
Przemek Wisniewski
Affiliation:
High Pressure Research Center, Polish Academy of Sciences, Warszawa, Poland
M. Osinski
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque
P. G. Eliseev
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque
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Abstract

We propose a new approach to explain the unusually low pressure coefficients of the luminescence peaks observed in single-quantum-well InGaN-based light emitting diodes manufactured by Nichia Chemical Industries. In view of the most recent first principles band structure calculations for InN under hydrostatic pressure, we find that it is possible to reproduce the measured low (12–16meV/GPa) pressure coefficients of the luminescence by assuming the formation of zincblende InN inclusions in the InGaN quantum well layers. These cubic inclusions, surrounded by the usual wurtzite material, should act like quantum dots giving rise to enhanced electron localization. Obtained this way, the pressure shift of the luminescence peaks in blue and green InGaN-based emitters should be close to 14meV/GPa, in good agreement with our experimental results. This explanation of the observed low pressure coefficients in these devices is consistent with recent independent evidence for InN inclusions in InGaN epilayers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 697
Copyright
Copyright © Materials Research Society 1998

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Footnotes

a

On leave from High Pressure Research Center, Warsaw, Poland, [email protected]

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