Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-23T11:14:48.114Z Has data issue: false hasContentIssue false
  • English
  • Français

Cu2ZnSnS4 thin film solar cell fabricated by magnetron sputtering and sulfurization

Published online by Cambridge University Press:  28 February 2014

Jian Chen ,
Chang Yan ,
Wei Li ,
Ning Song ,
Fangyang Liu ,
Shujuan Huang ,
Xiaojing Hao  and
Martin A. Green
Jian Chen
Affiliation:
School of Photovoltaics and Renewable Energy, University of New South Wales, NSW 2052, Australia.
Chang Yan
Affiliation:
School of Photovoltaics and Renewable Energy, University of New South Wales, NSW 2052, Australia.
Wei Li
Affiliation:
School of Photovoltaics and Renewable Energy, University of New South Wales, NSW 2052, Australia.
Ning Song
Affiliation:
School of Photovoltaics and Renewable Energy, University of New South Wales, NSW 2052, Australia.
Fangyang Liu
Affiliation:
School of Photovoltaics and Renewable Energy, University of New South Wales, NSW 2052, Australia.
Shujuan Huang
Affiliation:
School of Photovoltaics and Renewable Energy, University of New South Wales, NSW 2052, Australia.
Xiaojing Hao
Affiliation:
School of Photovoltaics and Renewable Energy, University of New South Wales, NSW 2052, Australia.
Martin A. Green
Affiliation:
School of Photovoltaics and Renewable Energy, University of New South Wales, NSW 2052, Australia.
Get access

Abstract

In this work, sulfurizing metal precursors prepared by magnetron sputtering was applied in Cu2ZnSnS4 (CZTS) thin film fabrication. Three precursor structures, namely substrate/ Zn/(Cu&Sn), substrate/Zn/Cu/Sn/Cu and substrate/Zn/Sn/Cu, were compared for their synthesized CZTS film quality. It is notable that CZTS film made of the precursor structure of substrate/Zn/(Cu&Sn) has the best film quality with no obvious voids and biggest average grain size. When applying this precursor structure into device fabrication, a working CZTS device with an efficiency of 2.26% was made. The impact of metal precursors on the structural property of CZTS film were characterised by SEM, XRD, Raman and TEM. Thick MoS2 interfacial layer (∼200nm) between absorber and back Mo contact and ZnS formed in the front and back absorber regions are the possible reasons limiting short-circuit current and fill factor of the cell.

Keywords

photovoltaicthin filmsputtering
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1638: Symposium W – Next-Generation Inorganic Thin-Film Photovoltaics , 2014 , mrsf13-1638-w09-01
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Wang, H., Progress in Thin Film Solar Cells Based on Cu 2 ZnSnS 4 . International Journal of Photoenergy, 2011. 2011: p. 1–10.CrossRefGoogle Scholar
Katagiri, H., et al. ., Development of CZTS-based thin film solar cells . Thin Solid Films, 2009. 517(7): p. 2455–2460.CrossRefGoogle Scholar
Delbos, S., Kësterite thin films for photovoltaics : a review . EPJ Photovoltaics, 2012. 3: p. 35004.CrossRefGoogle Scholar
Todorov, T.K., et al. ., Beyond 11% Effi ciency: Characteristics of State-of-the-Art Cu 2 ZnSn(S,Se) 4 Solar Cells . Advanced Energy Materials, 2012.Google Scholar
Sugimoto, H., et al. ., Lifetime Improvement for High Efficiency Cu2ZnSnS4 Submodules, in 39th IEEE PVSC 2013: Tampa Bay, Florida.Google Scholar
Shin, B., et al. ., Thin film solar cell with 8.4% power conversion efficiency using an earth-abundant Cu2ZnSnS4 absorber . Progress in Photovoltaics: Research and Applications, 2011.Google Scholar
Fernandes, P.A., Salomé, P.M.P., and da Cunha, A.F., Precursors' order effect on the properties of sulfurized Cu2ZnSnS4thin films . Semiconductor Science and Technology, 2009. 24(10): p. 105013.CrossRefGoogle Scholar
Scragg, J.J., Studies of Cu2ZnSnS4 films prepared by sulfurisation of electrodeposited precursors, in Department of Chemistry 2010, University of Bath.Google Scholar
Cheng, A.J., et al. ., Imaging and phase identification of Cu2ZnSnS4 thin films using confocal Raman spectroscopy . Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2011. 29(5): p. 051203.CrossRefGoogle Scholar
Salomé, P.M.P., et al. ., Growth and characterization of Cu 2 ZnSn(S,Se) 4 thin films for solar cells . Solar Energy Materials and Solar Cells, 2012. 101: p. 147–153.CrossRefGoogle Scholar
Flammersberger, H., Experimental study of Cu2ZnSnS4 thin films for solar cells, in Department of Engineering Sciences 2010, Uppsala University Google Scholar
Dave, M., et al. ., High pressure effect on MoS2 and MoSe2 single crystals grown by CVT method Bulletin of Material Science, 2004. 27(2): p. 213–216.CrossRefGoogle Scholar
Chelvanathan, P., et al. ., Effects of Transition Metal Dichalcogenide Molybdenum Disulfide Layer Formation in Copper–Zinc–Tin–Sulfur Solar Cells from Numerical Analysis . Japanese Journal of Applied Physics, 2012. 51: p. 10NC32.CrossRefGoogle Scholar
Mkawi, E.M., et al. ., Dependence of Copper Concentration on the Properties of Cu 2 ZnSnS 4 Thin Films Prepared by Electrochemical Method . International Journal of Electrochemical Science 2013. 8: p. 359–368.Google Scholar