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Crystallographically-Oriented Electrochemically-Deposited Bismuth Nanowires

Published online by Cambridge University Press:  01 February 2011

Oded Rabin ,
Gang Chen  and
Mildred S. Dresselhaus
Oded Rabin
Affiliation:
Dept. of Chemistry, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
Gang Chen
Affiliation:
Dept. of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
Mildred S. Dresselhaus
Affiliation:
Dept. of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A. Dept. of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
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Abstract

Bismuth nanowires 200 nm in diameter were synthesized via electrochemical deposition into the pores of anodic alumina templates. A near neutral pH solution and a special sample holder were employed. Both polycrystalline and (012) oriented bismuth nanowire arrays were prepared. The electrical resistance of the samples versus temperature was measured in the range 2–300 K, and the results were fitted to a transport model. Despite the crystallographic alignment of the nanowire array, the model calculations suggest the dominance of a temperature independent scattering mechanism (such as grain boundary or nanowire boundary scattering). The results are compared to the electrical resistance of nanowires formed by impregnation techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 793: Symposium S – Thermoelectric Materials 2003 - Research and Applications , 2003 , S5.4
Copyright
Copyright © Materials Research Society 2004

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References

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