Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-29T07:38:24.962Z Has data issue: false hasContentIssue false
  • English
  • Français

Crystallographic Texture and Phase Metrology During Damascene Copper Processing

Published online by Cambridge University Press:  01 February 2011

K.J. Kozaczek ,
P.W. DeHaven ,
K.P. Rodbell ,
S. Malhotra ,
D.S. Kurtz ,
R.I. Martin  and
P.R. Moran
K.J. Kozaczek
Affiliation:
HyperNex, Inc. 3006 Research Drive, State College, PA 16801
P.W. DeHaven
Affiliation:
IBM Microelectronics Division, East Fishkill, NY 12533
K.P. Rodbell
Affiliation:
IBM Research, Yorktown Heights, NY 10598
S. Malhotra
Affiliation:
IBM Microelectronics Division, East Fishkill, NY 12533
D.S. Kurtz
Affiliation:
HyperNex, Inc. 3006 Research Drive, State College, PA 16801
R.I. Martin
Affiliation:
HyperNex, Inc. 3006 Research Drive, State College, PA 16801
P.R. Moran
Affiliation:
HyperNex, Inc. 3006 Research Drive, State College, PA 16801
Get access

Abstract

The rapid adoption of damascene copper technology has brought about an increased need to understand and control microstructure in the barrier and metal layers during processing. We have developed and implemented a methodology for rapidly characterizing thin film polycrystalline microstructures on 200 mm Si substrates using an X-ray diffraction (XRD) based metrology tool to measure crystallographic texture and phase in a time frame suitable for in-line applications. The acquired data can be used as a direct measure of the deposition process in terms of film quality, reproducibility and stability over time. The spatial distribution of crystallographic texture and phase can be measured on a single wafer in order to check within wafer uniformity. These same measurements can also be carried out at predetermined intervals on wafers from single deposition tools, with the results used to create a database that can be applied to process control trend charting and to the establishment of acceptance criteria. The methodology developed makes use of several novel data analysis and collection techniques, such as the use of a direct matrix transformation method to determine the orientation distribution function (ODF) from a group of truncated pole figures. Useful quantitative outputs of the ODF, such as volumetric fractions of crystallographic texture components, can be used in quantifying texture evolution within and between wafers. On-the-fly texture compensation can also be used to generate useful quantitative phase and film thickness measurements. We present the principles of operation of this metrology tool and selected examples collected in the IBM's Advanced Semiconductor Technology Center (ASTC), East Fishkill, NY.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 721: Symposia E/J – Texture and Microstructure in Electronic and Magnetic Films – Nanostructural Magnetic Materials for Data Storage , 2002 , J1.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kozaczek, K.J., Martin, R.I., Kurtz, D.S., Moran, P.R., O'Leary, S.P., Martin, R.L., Advances In X-ray Analysis, Vol.44 (2001), pp. 266–271.Google Scholar
2. Kozaczek, K.J., Kurtz, D.S., Moran, P.R., Gross, M.E., Evans-Lutterodt, K., Advanced Metallization Conference 2000, ed. Edelstein, D. et al. (MRS, Warrendale, Pa, 2000), pp. 193–197.Google Scholar
3. Kozaczek, K.J., DeHaven, P.W., Rodbell, K.P., Malhotra, S., Restaino, D., Simon, A.H., Kurtz, D.S., Martin, R.I., Moran, P.R., presented at the Advanced Metallization Conference 2001, Montreal, Canada, October 9-11, 2001.Google Scholar
4. Kurtz, D.S., Kozaczek, K.J., Moran, O.R., US patent 6301330B1 “Apparatus and method for texture analysis in semiconductor wafers” 2001.Google Scholar
5. , Matthies, Phys. Stat. Sol. (b) 92 (1979), pp. K135–K138.Google Scholar
6. , Pawlik, Phys. Stat. Sol. (b) 124 (1986), p. 477.Google Scholar
7. Bunge, H.-J., Texture Analysis in Materials Science (Butterworths, London, 1982).Google Scholar
8. Edelstein, D., Uzoh, C., Cabral, C. Jr, DeHaven, P., Buchwalter, P., Simon, A., Cooney, E., Malhotra, S., Klaus, D., Rathore, H., Agrawala, B., Nguyen, D., International Interconnect Technology Conference, June 4-6, 2001, San Francisco, CA. Google Scholar
9. Walther, D., Gross, M.E., Evans-Lutterodt, K., Brown, W. L., Oh, M., Merchant, S., Naresh, P., Mat. Res. Soc. Symp. Proc. Vol. 612, (MRS, 2000), pp. D10.1–D10.1.10.Google Scholar
10. Celis, J. P., in Directional Properties of Materials, ed. Bunge, H. J. (DGM, Oberusel, 1988), p.189.Google Scholar