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Crystallization Processes in Amorphous Hydrogenated Silicon Based Alloys

Published online by Cambridge University Press:  15 February 2011

F. Demichelis ,
C. F. Pirri ,
E. Tresso ,
L. Battezzati ,
E. Giamello  and
P. Menna
F. Demichelis
Affiliation:
Dip. Fisica Politecnico - C.so Duca degli Abruzzi 24 10129 Torino (Italy).
C. F. Pirri
Affiliation:
Dip. Fisica Politecnico - C.so Duca degli Abruzzi 24 10129 Torino (Italy).
E. Tresso
Affiliation:
Dip. Fisica Politecnico - C.so Duca degli Abruzzi 24 10129 Torino (Italy).
L. Battezzati
Affiliation:
Dip. Chimica Inorganica, Chim. Fisica e Chim. Materiali Universita' di Torino - Via Pietro Giuria 7 10125 (Italy)
E. Giamello
Affiliation:
Dip. Chimica Inorganica, Chim. Fisica e Chim. Materiali Universita' di Torino - Via Pietro Giuria 7 10125 (Italy)
P. Menna
Affiliation:
ENEA, Centro Ricerche Fotovoltaiche - 80055 Portici (Italy)
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Abstract

Amorphous and microcrystalline films of silicon and silicon carbide have been deposited by means of PECVD at low substrate temperature (200°C), with reactive gases highly diluted in H2. Devices quality a-Si:H films have been annealed in vacuum at temperatures in the range 200- 1000 °C. The transition from amorphous to crystalline structure was studied by X-ray, Raman and I.R. spectroscopies, optical analysis in UV-VIS-NIR region, Transmission Electron Microscopy, Differential Scanning Calorimetry and Electron Spin Resonance measurements. By comparing the results of the two methods to obtain microcrystalline films we have deduced information on the process of growth of Si and SiC microcrystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 230: Symposium R – Phase Transformation Kinetics in Thin Films , 1991 , 183
Copyright
Copyright © Materials Research Society 1992

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